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Sigma-Aldrich

Molybdenum

foil, thickness 0.025 mm, ≥99.9% trace metals basis

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Synonym(s):
Molybdenum element
Empirical Formula (Hill Notation):
Mo
CAS Number:
7439-98-7
Molecular Weight:
95.94
MDL number:
MFCD00003465
PubChem Substance ID:
24861897
NACRES:
NA.23

Quality Level

100

Assay

≥99.9% trace metals basis

form

foil

resistivity

5.0 μΩ-cm, 20°C

thickness

0.025 mm

bp

4612 °C (lit.)

mp

2617 °C (lit.)

density

10.3 g/mL at 25 °C (lit.)

SMILES string

[Mo]

InChI

1S/Mo

InChI key

ZOKXTWBITQBERF-UHFFFAOYSA-N

General description

Mo foils are lightweight and flexible, hence desirable for space applications. Mo foil may be used as a substrate for the fabrication of CdS-CdTe solar cells. Interaction of selenium, arsenic hydrides, stibine and bismuthine with Mo foil was investigated by atomic absorption spectroscopy. Mo foils may be used to generate metal diffusion bonding in silicon carbide/silicon carbide (SiC/SiC) joints.

Quantity

150 × 150 mm (approximately 5.8 g)

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Trapping of hydride forming elements within miniature electrothermal devices. Part 3. Investigation of collection of antimony and bismuth on a molybdenum foil strip following hydride generation
Krejci P, et al.
Spectrochimica Acta. Part B: Atomic Spectroscopy, 61, 444-449 (2006)
Trapping of hydride forming elements within miniature electrothermal devices: part I. investigation of collection of arsenic and selenium hydrides on a molybdenum foil strip
Docekal B and Selecka A
Spectrochimica Acta. Part B: Atomic Spectroscopy, 59(4), 487-495 (2004)
Design issues in the fabrication of CdS?CdTe solar cells on molybdenum foil substrates.
Singh VP and McClure JC
Solar Energy Materials and Solar Cells, 76, 363-385 (2003)
Flexural Strength and Shear Strength of Silicon Carbide to Silicon Carbide Joints Fabricated by a Molybdenum Diffusion Bonding Technique.
Cockeram BV, et al.
Journal of the American Ceramic Society. American Ceramic Society, 88(7), 1892-1899 (2006)
Measurement of mobility in dual-gated MoS₂ transistors.
Michael S Fuhrer et al.
Nature nanotechnology, 8(3), 146-147 (2013-03-06)
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