- Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface.
Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface.
Advanced materials (Deerfield Beach, Fla.) (2012-06-09)
Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hideki Yamamoto
PMID22678725
ABSTRACT
An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free GaN surface shows very sharp violet PL emission. The size (16 μm in diameter) is large enough for state-of-the-art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect.