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  • Biochemistry and semiconductor electronics--the next big hit for silicon?

Biochemistry and semiconductor electronics--the next big hit for silicon?

Journal of physics. Condensed matter : an Institute of Physics journal (2012-04-03)
Stuart Lindsay
ABSTRACT

Two recent developments portend a new era for silicon electronics in biomedical applications. Firstly, highly specific chemical recognition and massively parallel sample preparation techniques are being combined with VLSI to make new kinds of analytical chips. Secondly, critical dimensions are beginning to approach the size of biomolecules, opening new pathways for physical interactions between molecules and semiconductor structures. Future generations of hybrid chemical-CMOS devices could revolutionize diagnosis and make personalized medicine cheap enough to become widespread.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Silicon, disks, 13mm, thickness 0.38mm, single crystal, 100%
Silicon, rod, 100mm, diameter 2.0mm, crystalline, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silicon, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, rod, 50mm, diameter 5.0mm, crystalline, 100%
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Silicon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
Silicon, rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%
Silicon, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
Silicon, rod, 100mm, diameter 25mm, crystalline, 100%
Silicon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -111, 100%
Silicon, rod, 50mm, diameter 3.15mm, single crystal - random orientation, 100%