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241431

六羰基钨

97%

别名:

Hexacarbonyltungsten, Tungsten carbonyl

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关于此项目

线性分子式:
W(CO)6
化学文摘社编号:
14040-11-0
分子量:
351.90
NACRES:
NA.23
PubChem Substance ID:
24854483
UNSPSC Code:
12352103
EC Number:
237-880-2
MDL number:
MFCD00011462
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vapor density

12.1 (vs air)

Quality Level

100

vapor pressure

1.2 mmHg ( 67 °C)

assay

97%

form

solid

reaction suitability

core: tungsten, reagent type: catalyst

impurities

<1% Mo

mp

150 °C (lit.)

density

2.65 g/mL at 25 °C (lit.)

SMILES string

[W].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+].[C-]#[O+]

InChI

1S/6CO.W/c6*1-2;

InChI key

FQNHWXHRAUXLFU-UHFFFAOYSA-N

Application

六羰基钨，[W(CO)6] 可用作沉积的前体 WO 3-x 薄膜，可用于检测 NO 2 的气体传感器。
费舍尔卡宾配合物的前体，将Pd(II)还原为在Hiyama交叉偶联中具有催化活性的纳米颗粒Pd(0)。

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pictograms

Skull and crossbones
GHS06

signalword

Danger

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral

存储类别

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCZ9601
MKCZ8080
MKCZ3434
MKCZ1063
MKCX8397

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商品

Nanowire Synthesis: From Top-Down to Bottom-Up

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

Aerosol assisted chemical vapour deposition of WO 3 thin films from tungsten hexacarbonyl and their gas sensing properties.
Ashraf S, et al.
Journal of Materials Chemistry, 17.35, 3708-3713 (2007)
Dipankar Srimani et al.
Organic letters, 9(18), 3639-3642 (2007-08-07)
An efficient synthesis of Pd nanoparticles in water has been developed using a Fischer carbene complex of tungsten as the reductant and PEG as the capping agent. The colloidal palladium (1 mol %) efficiently catalyzes Hiyama cross-coupling reactions performed in
Sarah M Eichfeld et al.
ACS nano, 9(2), 2080-2087 (2015-01-28)
Tungsten diselenide (WSe2) is a two-dimensional material that is of interest for next-generation electronic and optoelectronic devices due to its direct bandgap of 1.65 eV in the monolayer form and excellent transport properties. However, technologies based on this 2D material
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全球贸易项目编号

货号GTIN
241431-10G04061825095301
241431-50G04061825097350