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Merck
CN

339113

乙醇钽(V)

99.98% trace metals basis

别名:

乙醇钽, 乙醇钽(V), 五乙氧基钽, 五氧化钽, 钽酸五乙酯

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线性分子式:
Ta(OC2H5)5
化学文摘社编号:
分子量:
406.25
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
MDL number:
Beilstein/REAXYS Number:
3678999
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产品名称

乙醇钽(V), 99.98% trace metals basis

InChI

1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5

SMILES string

CCO[Ta](OCC)(OCC)(OCC)OCC

InChI key

HSXKFDGTKKAEHL-UHFFFAOYSA-N

assay

99.98% trace metals basis

form

liquid

reaction suitability

core: tantalum
reagent type: catalyst

impurities

<2 wt. % toluene

refractive index

n20/D 1.487 (lit.)

bp

155 °C/0.01 mmHg (lit.)

mp

21 °C (lit.)

density

1.566 g/mL at 25 °C (lit.)

Quality Level

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Application

Tantalum ethoxide is used as a precursor
  • To synthesize modified tantalum-alkoxo complexes, enabling the fabrication of TaO thin films with tunable optical properties.
  • In the sol–gel synthesis of tantalum oxide nanoparticles, which, when doped with rare earth elements, form wide band gap semiconductors showing both stokes and anti-stokes visible luminescence.
  • To synthesize hollow TaOx nanoshells in the formation of BiS@TaOx-HA core–shell nanoparticles, which serve as multifunctional theranostic agents for CT/photoacoustic imaging and enhanced photothermal cancer therapy.

Features and Benefits

  • 99.98% purity on a trace metals basis ensures minimal contamination for critical applications, resulting in superior quality materials.
  • Low metal impurities (< 250.0 ppm) enhance sol-gel formation for the synthesis of nanoparticles.

General description

Tantalum(V) ethoxide is primarily used to produce tantalum oxide thin films for applications in optics, semiconductors, and electrochromic devices. These films possess high refractive index and excellent electrical insulation properties. Additionally, when tantalum is alloyed with other metals, it gains enhanced strength, ductility, and corrosion resistance, making it highly suitable for applications in electronics and advanced materials. Our 99.98% trace metals basis of Tantalum(V) ethoxide is suitable for the synthesis of  tantalum oxide by chemical vapor deposition (CVD).

pictograms

Flame

signalword

Warning

hcodes

Hazard Classifications

Flam. Liq. 3

存储类别

3 - Flammable liquids

wgk

WGK 1

flash_point_f

84.2 °F - closed cup

flash_point_c

29 °C - closed cup

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

法规信息

危险化学品
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分析证书(COA)

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Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al.
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Mark E Lobatto et al.
Nanomedicine : nanotechnology, biology, and medicine, 11(5), 1133-1140 (2015-03-21)
The present study describes the development of a good manufacturing practice (GMP)-grade liposomal nanotherapy containing prednisolone phosphate for the treatment of inflammatory diseases. After formulation design, GMP production was commenced which yielded consistent, stable liposomes sized 100nm±10nm, with a prednisolone

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The properties of many devices are limited by the intrinsic properties of the materials that compose them.

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