339113
乙醇钽(V)
99.98% trace metals basis
别名:
乙醇钽, 乙醇钽（V）, 五乙氧基钽, 五氧化钽, 钽酸五乙酯
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关于此项目
线性分子式:
Ta(OC2H5)5
化学文摘社编号:
分子量:
406.25
Beilstein:
3678999
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23
方案
99.98% trace metals basis
表单
liquid
反应适用性
core: tantalum
reagent type: catalyst
杂质
<2 wt. % toluene
折射率
n20/D 1.487 (lit.)
沸点
155 °C/0.01 mmHg (lit.)
mp
21 °C (lit.)
密度
1.566 g/mL at 25 °C (lit.)
SMILES字符串
CCO[Ta](OCC)(OCC)(OCC)OCC
InChI
1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5
InChI key
HSXKFDGTKKAEHL-UHFFFAOYSA-N
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一般描述
Tantalum(V) ethoxide is primarily used to produce tantalum oxide thin films for applications in optics, semiconductors, and electrochromic devices. These films possess high refractive index and excellent electrical insulation properties. Additionally, when tantalum is alloyed with other metals, it gains enhanced strength, ductility, and corrosion resistance, making it highly suitable for applications in electronics and advanced materials. Our 99.98% trace metals basis of Tantalum(V) ethoxide is suitable for the synthesis of tantalum oxide by chemical vapor deposition (CVD).
应用
Tantalum ethoxide is used as a precursor
- To synthesize modified tantalum-alkoxo complexes, enabling the fabrication of Ta₂O₅ thin films with tunable optical properties.
- In the sol–gel synthesis of tantalum oxide nanoparticles, which, when doped with rare earth elements, form wide band gap semiconductors showing both stokes and anti-stokes visible luminescence.
- To synthesize hollow TaOx nanoshells in the formation of Bi₂S₃@TaOx-HA core–shell nanoparticles, which serve as multifunctional theranostic agents for CT/photoacoustic imaging and enhanced photothermal cancer therapy.
特点和优势
- 99.98% purity on a trace metals basis ensures minimal contamination for critical applications, resulting in superior quality materials.
- Low metal impurities (< 250.0 ppm) enhance sol-gel formation for the synthesis of nanoparticles.
警示用语：
Warning
危险声明
危险分类
Flam. Liq. 3
储存分类代码
3 - Flammable liquids
WGK
WGK 1
闪点(°F)
84.2 °F - closed cup
闪点(°C)
29 °C - closed cup
个人防护装备
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
法规信息
危险化学品
此项目有
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al.
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Martina Weineisen et al.
Journal of nuclear medicine : official publication, Society of Nuclear Medicine, 56(8), 1169-1176 (2015-06-20)
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商品
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