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Merck
CN

339180

Sigma-Aldrich

乙氧基锗

≥99.95% trace metals basis

别名:

四乙氧基锗

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关于此项目

线性分子式:
Ge(OC2H5)4
CAS Number:
分子量:
252.88
Beilstein:
3661173
EC 号:
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23
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质量水平

方案

≥99.95% trace metals basis

表单

liquid

反应适用性

core: germanium
reagent type: catalyst

杂质

≤0.01% Si

折射率

n20/D 1.407 (lit.)

密度

1.14 g/mL at 25 °C (lit.)

SMILES字符串

CCO[Ge](OCC)(OCC)OCC

InChI

1S/C8H20GeO4/c1-5-10-9(11-6-2,12-7-3)13-8-4/h5-8H2,1-4H3

InChI key

GXMNGLIMQIPFEB-UHFFFAOYSA-N

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一般描述

Germanium(IV) ethoxide is a high-purity, colorless to pale yellow liquid organometallic compound with a trace metal purity of ≥99.95%. It is widely used as a catalyst and a precursor for solution-based and vapor-phase deposition processes, such as sol-gel synthesis, chemical vapor deposition (CVD), and atomic layer deposition (ALD). Its excellent volatility, reactivity, and metal-organic composition make it suitable for producing high-quality germanium-containing films, coatings, and nanostructures in electronics, optics, and semiconductor industries.

应用

溶胶-凝胶中间体,用于光纤和光敏 SiO2-BeO2 玻璃。
Germanium(IV) ethoxide can be used as:
  • A precursor in the synthesis of germanium oxide nanostructures via photonic curing.
  • A key dopant precursor in the synthesis of Ge-doped hematite photoanodes for enhancing charge separation efficiency in photoelectrochemical water splitting.
  • A germanium source to synthesize the bismuth germanate via the sol-gel process, to develop uniform thin films suitable for advanced applications.

其他说明

含有甲苯

象形图

FlameExclamation mark

警示用语:

Warning

危险分类

Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT SE 3

靶器官

Respiratory system

储存分类代码

3 - Flammable liquids

WGK

WGK 3

闪点(°F)

120.0 °F - closed cup

闪点(°C)

48.9 °C - closed cup

个人防护装备

Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter

法规信息

危险化学品

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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访问文档库

Mat. Res. Soc. Symp. Proc., 73, 443-443 (1986)
Sol-gel processing of bismuth germanate thin-films
Secu, Mihail and Secu, et al.
Coatings, 10, 255-255 (2020)
Ideal dopant to increase charge separation efficiency in hematite photoanodes: germanium
de Matos Rodrigues, et al.
Journal of Materials Chemistry, 10, 13456-13466 (2022)
Synthesis of Silicon and Germanium Oxide Nanostructures via Photonic Curing; a Facile Approach to Scale Up Fabrication
Khatoon, Najma and Subedi, et al.
ChemistryOpen, 13, e202300260-e202300260 (2014)
Non-Cryst. Solids, 168, 195-195 (1994)

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