产品名称
四甲基硅烷, electronic grade, ≥99.99% trace metals basis
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
InChI key
CZDYPVPMEAXLPK-UHFFFAOYSA-N
SMILES string
C[Si](C)(C)C
grade
electronic grade
vapor pressure
11.66 psi ( 20 °C)
assay
≥99.99% trace metals basis
form
liquid
autoignition temp.
842 °F
refractive index
n20/D 1.358 (lit.)
bp
26-28 °C (lit.)
mp
−99 °C (lit.)
density
0.648 g/mL at 25 °C (lit.)
storage temp.
2-8°C
Quality Level
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General description
商品
High Purity Metalorganic Precursors for CPV Device Fabrication
atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer
Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes
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