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Merck
CN

647101

Sigma-Aldrich

greener alternative

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

别名:

硅元素

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关于此项目

线性分子式:
Si
CAS Number:
分子量:
28.09
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
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表单

crystalline (cubic (a = 5.4037))
wafer (single side polished)

质量水平

不包含

dopant

环保替代产品特性

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

直径× 厚度

2 in. × 0.5 mm

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

环保替代产品分类

半导体性质

<111>, N-type

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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一般描述

氧含量:≤ 1~1.8×1018/cm3;碳含量:≤ 5×1016/cm3;晶棒直径:1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 100 - 3000Ωcm。
We are committed to bringing you Greener Alternative Products, which belongs to one of the four categories of greener alternatives. This enabling product has been enhanced for energy efficiency. Click here for more information.

应用


  • 硅光子学和电子学:讨论硅光子学与电子学的集成,与开发高性能计算设备相关,与材料科学和高性能计算研究相(C Xiang et al., 2021

  • 硅硅 pi 单键:详细介绍了硅的结构化学及其在分子和材料科学中的含义,对关注硅在纳米技术和材料科学中的应用的化学家很有用(S Kyushin et al., 2020)。

储存分类代码

13 - Non Combustible Solids

WGK

nwg

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

法规信息

危险化学品

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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访问文档库

Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.

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