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Merck
CN

647535

Sigma-Aldrich

硅

greener alternative

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

别名:

Silicon element

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关于此项目

线性分子式:
Si
CAS Number:
7440-21-3
分子量:
28.09
EC 号:
231-130-8
MDL编号:
MFCD00085311
UNSPSC代码:
12352300
PubChem化学物质编号:
24883543
NACRES:
NA.23

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表单

crystalline (cubic (a = 5.4037))
wafer (single side polished)

质量水平

100

不包含

dopant

环保替代产品特性

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

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直径× 厚度

3 in. × 0.5 mm

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

环保替代产品分类

Enabling

半导体性质

<100>, N-type

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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相关类别

一般描述

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 1,000 - 2,300Ωcm
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应用

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.

储存分类代码

13 - Non Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

法规信息

危险化学品

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCZ3550
MKCW4829
MKCR0472
MKCS1535
MKCQ0514

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访问文档库

Nanolithography in microelectronics: A review
Seisyan RP
Technical Physics, 56(8), 1061-1061 (2011)
24.7% record efficiency HIT solar cell on thin silicon wafer
Taguchi M, et al.
IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
Stretchable and foldable silicon integrated circuits
Kim D, et al.
Science (New York, N.Y.), 320(5875), 507-511 (2008)
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
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