647799
硅
wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
别名:
Silicon element
表单
crystalline (cubic (a = 5.4037))
wafer (single side polished)
质量水平
包含
phosphorus as dopant
环保替代产品特性
Design for Energy Efficiency
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直径× 厚度
2 in. × 0.5 mm
沸点
2355 °C (lit.)
mp
1410 °C (lit.)
密度
2.33 g/mL at 25 °C (lit.)
环保替代产品分类
半导体性质
<111>, N-type
SMILES字符串
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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相关类别
一般描述
氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ωcm
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储存分类代码
13 - Non Combustible Solids
WGK
WGK 2
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type N95 (US)
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