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组成
volatiles, 50-80%
质量水平
bp
100 °C (lit.)
100 °C/1 atm
溶解性
H2O: miscible
密度
1.2924 g/mL at 25 °C (lit.)
InChI
1S/HI.K/h1H;/q;+1/p-1
InChI key
NLKNQRATVPKPDG-UHFFFAOYSA-M
一般描述
蚀刻容易控制，底切最小。室温下运行。无氰标准应用。25℃时腐蚀速率为 28 埃/秒。
金蚀刻剂是由碘化钾和碘组成的络合剂，通过电化学氧化金合成。
应用
金蚀刻剂是选择性通用金蚀刻剂，可与负性和正性光致抗蚀剂相容。用于蚀刻金（Au）电极，随后用扫描电子显微镜（SEM）成像，进行形态学研究，也用于金属层，制备纳米电极阵列。 金蚀刻剂还可用于金属辅助化学蚀刻（MACE），制造基于p-n结结构硅纳米柱的太阳能电池。
警示用语：
Danger
危险声明
危险分类
STOT RE 1 Oral
靶器官
Thyroid
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
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实验方案
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
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