蒸汽压
69.3 mmHg ( 60 °C)
质量水平
描述
heat of vaporization: ~41.9 kJ/mol (Dimer)
形式
liquid
reaction suitability
core: aluminum
bp
125-126 °C (lit.)
127 °C/760 mmHg
20 °C/8 mmHg
56 °C/50 mmHg
mp
15 °C (lit.)
密度
0.752 g/mL at 25 °C (lit.)
SMILES string
C[Al](C)C
InChI
1S/3CH3.Al/h3*1H3;
InChI key
JLTRXTDYQLMHGR-UHFFFAOYSA-N
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一般描述
警示用语：
Danger
危险分类
Eye Dam. 1 - Pyr. Liq. 1 - Skin Corr. 1B - Water-react 1
补充剂危害
储存分类代码
4.2 - Pyrophoric and self-heating hazardous materials
WGK
nwg
闪点(°F)
No data available
闪点(°C)
No data available
个人防护装备
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
法规信息
分析证书(COA)
输入产品批号来搜索 分析证书(COA) 。批号可以在产品标签上"批“ （Lot或Batch）字后找到。
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示例
其它示例：
705578-5MG-PW
PL860-CGA/SHF-1EA
MMYOMAG-74K-13
1000309185
输入内容 1.000309185)
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如何查找COA批号
批号可以在产品标签上"批“ （Lot或Batch）字后面找到。
Aldrich 产品
如果您查询到的批号为 TO09019TO 等，请输入去除前两位字母的批号：09019TO。
如果您查询到的批号含有填充代码（例如05427ES-021），请输入去除填充代码-021的批号：05427ES。
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部分情况下，可能未在线提供COA。如果搜索不到COA，可在线索取。
Which document(s) contains shelf-life or expiration date information for a given product?
If available for a given product, the recommended re-test date or the expiration date can be found on the Certificate of Analysis.
How do I get lot-specific information or a Certificate of Analysis?
The lot specific COA document can be found by entering the lot number above under the "Documents" section.
How do I find price and availability?
There are several ways to find pricing and availability for our products. Once you log onto our website, you will find the price and availability displayed on the product detail page. You can contact any of our Customer Sales and Service offices to receive a quote. USA customers: 1-800-325-3010 or view local office numbers.
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Transportation information can be found in Section 14 of the product's (M)SDS.To access the shipping information for this material, use the link on the product detail page for the product.
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商品
In recent years considerable interest in ALD has emerged, mainly due to its ability to controllably coat even very small structures, e.g. nanoor microstructures.
Atomic layer deposition (ALD) techniques have emerged in the last ten years to meet various needs including semiconductor device miniaturization, conformal deposition on porous structures and coating of nanoparticles. ALD is based on two sequential self-limiting surface reactions.
近十年来出现了原子层沉积（ALD）技术以满足各种需求，包括半导体器件小型化、多孔结构上的保形沉积和纳米颗粒涂层。ALD基于两个相继的自限性表面反应。
igma-Aldrich.com presents an article regarding the savannah ALD system - an excellent tool for atomic layer deposition.
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
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