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679208

甲基三氯硅烷

deposition grade, ≥98% (GC), ≥99.99% (as metals)

别名:

三氯(甲基)硅烷

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关于此项目

线性分子式:
CH3SiCl3
化学文摘社编号:
75-79-6
分子量:
149.48
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
24885475
EC Number:
200-902-6
Beilstein/REAXYS Number:
1361381
MDL number:
MFCD00000481
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grade

deposition grade

vapor density

5.2 (vs air)

vapor pressure

150 mmHg ( 25 °C)

assay

≥98% (GC), ≥99.99% (as metals)

form

liquid

autoignition temp.

>760 °F

expl. lim.

11.9 %

refractive index

n20/D 1.411 (lit.)

bp

66 °C (lit.)

density

1.273 g/mL at 25 °C (lit.)

SMILES string

C[Si](Cl)(Cl)Cl

InChI

1S/CH3Cl3Si/c1-5(2,3)4/h1H3

InChI key

JLUFWMXJHAVVNN-UHFFFAOYSA-N

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Danger

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 4 Dermal - Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1A - STOT SE 3

target_organs

Respiratory system

存储类别

3 - Flammable liquids

wgk

WGK 1

flash_point_f

46.4 °F - closed cup

flash_point_c

8 °C - closed cup

法规信息

危险化学品

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历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
SHBS9341
SHBF8026V
SHBF6342V
SHBF2673V
SHBD5576V

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Deposition Grade Silanes for Sol-Gel Processes

Deposition Grade Silanes, fully characterized by chemical analysis and nuclear magnetic resonance (NMR) with greater than 98% purity, for Sol-Gel Processes.

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Yingbin Ge et al.
The journal of physical chemistry. A, 114(6), 2384-2392 (2010-01-29)
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of methyltrichlorosilane (Ge, Y. B.; Gordon, M. S.; Battaglia, F.; Fox, R. O. J. Phys. Chem. A 2007, 111, 1462.) were calculated. Transition state theory was
W H Mullen et al.
Clinica chimica acta; international journal of clinical chemistry, 157(2), 191-198 (1986-06-15)
An enzyme electrode is described based upon the enzyme lactate oxidase (EC 1.1.3.2) coupled to an H2O2 sensor. Use of an organosilane-treated microporous membrane over the enzyme layer, allows responses linear to 18 mmol/l L-lactate with response times of 1-3
Yingbin Ge et al.
The journal of physical chemistry. A, 111(8), 1475-1486 (2007-02-06)
The kinetics for the previously proposed 114-reaction mechanism for the chemical vapor deposition (CVD) process that leads from methyltrichlorosilane (MTS) to silicon carbide (SiC) are examined. Among the 114 reactions, 41 are predicted to proceed with no intervening barrier. For
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货号GTIN
679208-50G04061832749464