751774
Tris(diethylamido)(tert-butylimido)niobium(V)
packaged for use in deposition systems
别名:
(tert)-Butyliminotris(diethylamino)niobium, tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium, t-Butylimido tris(diethylamido)niobium(V)
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关于此项目
线性分子式:
((CH3)6N)3NbN(CH3)3
化学文摘社编号:
分子量:
380.41
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
Quality Segment
form
liquid
reaction suitability
core: niobium
density
1.015 g/mL at 25 °C
SMILES string
CCN(CC)[Nb](=NC(C)(C)C)(N(CC)CC)N(CC)CC
InChI
1S/C4H9N.3C4H10N.Nb/c1-4(2,3)5;3*1-3-5-4-2;/h1-3H3;3*3-4H2,1-2H3;/q;3*-1;+3
InChI key
CBCDPJRPMPTFKA-UHFFFAOYSA-N
General description
Tris(diethylamido)(tert-butylimido)niobium(V) (TBTDEN) is a volatile, thermally stable liquid used as a niobium precursor for thin-film deposition. It offers high vapor pressure and clean decomposition, making it ideal for applications requiring materials with high dielectric constants and robust barrier layers.
Application
Tris(diethylamido)(tert-butylimido)niobium(V) is used as a niobium precursor
- In atomic layer deposition to create niobium-doped tin oxide (NTO), a conductive material. These NTO scaffolds provide a large surface area for thin platinum layers, improving electron transfer in dye-sensitized solar cells.
- In metal-organic chemical vapor deposition (MOCVD) to grow niobium nitride (NbN) thin films. These films, deposited on silicon wafers, offers good conductivity and are suitable for electronic applications such as gate stacks.
signalword
Danger
hcodes
target_organs
Respiratory system
存储类别
4.3 - Hazardous materials which set free flammable gases upon contact with water
wgk
WGK 3
flash_point_f
26.6 °F - closed cup
flash_point_c
-3 °C - closed cup
Hazard Classifications
Eye Irrit. 2 - Flam. Liq. 2 - STOT SE 3 - Water-react. 2