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About This Item
Linear Formula:
H2C=CHSi(CH3)Cl2
CAS Number:
Molecular Weight:
141.07
UNSPSC Code:
12352100
NACRES:
NA.22
PubChem Substance ID:
EC Number:
204-710-3
Beilstein/REAXYS Number:
1740822
MDL number:
Assay:
97%
vapor density
>1 (vs air)
Quality Level
assay
97%
refractive index
n20/D 1.430 (lit.)
bp
92 °C (lit.)
density
1.08 g/mL at 25 °C (lit.)
storage temp.
2-8°C
SMILES string
C[Si](Cl)(Cl)C=C
InChI
1S/C3H6Cl2Si/c1-3-6(2,4)5/h3H,1H2,2H3
InChI key
YLJJAVFOBDSYAN-UHFFFAOYSA-N
General description
Dichloromethylvinylsilane reacts with dimethylsulphide borane to form organosilylborane, which further gets ammonolysized to form the polymer of the SiBCN.
Application
Dichloromethylvinylsilane was used as single molecular precursor for the deposition of β-SiC thin films and β -SiC nanowires by metalorganic chemical vapor deposition on bare Si 100 and Ni-coated Si 100 substrates. Dichloromethylvinylsilane was used in the synthesis and characterization of Tris(1-(dichloro(methyl)silyl)ethyl)borane,monomer.
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 3 Inhalation - Acute Tox. 4 Oral - Flam. Liq. 2 - Skin Corr. 1B
supp_hazards
Storage Class
3 - Flammable liquids
wgk
WGK 1
flash_point_f
38.1 °F - closed cup
flash_point_c
3.4 °C - closed cup
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
Regulatory Information
危险化学品
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Synthesis and Structure Characterization of Amorphous SiBCN Ceramic Precursors.
Yajing L and Yue Z.
Rare Metals Materials and Engineering, 40, 234-237 (2011)
Influence of the Precursor Cross-Linking Route on the Thermal Stability of Si- B- C- O Ceramics.
Ischenko V, et al.
Chemistry of Materials, 20(22), 7148-7156 (2008)
Growth of β-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane.
Kang B-C, et al.
J. Vac. Sci. Technol. B, 23(4), 1722-1725 (2005)
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 104914-100G | 04061838344793 |
| 104914-500G | 04061837082566 |


