326623
Indium
wire, diam. 0.25 mm, 99.999% trace metals basis
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About This Item
Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141719
EC Number:
231-180-0
MDL number:
form
wire
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
InChI
1S/In
SMILES string
[In]
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.999% trace metals basis
resistivity
8.37 μΩ-cm
diam.
0.25 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
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Preparation Note
1.8 g = 5 m
signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
Storage Class
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.
G W Shu et al.
Optics express, 21 Suppl 1, A123-A130 (2013-02-15)
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that
G W Shu et al.
Physical chemistry chemical physics : PCCP, 15(10), 3618-3622 (2013-02-06)
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of
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