333395
Dichlorosilane
≥99.99% trace metals basis
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About This Item
Linear Formula:
Cl2SiH2
CAS Number:
Molecular Weight:
101.01
UNSPSC Code:
12352300
PubChem Substance ID:
EC Number:
223-888-3
MDL number:
vapor density
3.5 (vs air)
vapor pressure
1254 mmHg ( 20 °C)
description
film resistivity > 50 Ω-cm
assay
≥99.99% trace metals basis
autoignition temp.
136 °F
expl. lim.
99 %
bp
8.3 °C (lit.)
mp
−122 °C (lit.)
SMILES string
Cl[SiH2]Cl
InChI
1S/Cl2H2Si/c1-3-2/h3H2
InChI key
MROCJMGDEKINLD-UHFFFAOYSA-N
General description
Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.
Application
DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B
supp_hazards
Storage Class
2A - Gases
wgk
WGK 1
flash_point_f
-34.6 °F
flash_point_c
-37 °C
ppe
Faceshields, Gloves, Goggles, multi-purpose combination respirator cartridge (US)
Regulatory Information
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T Chen et al.
Electrophoresis, 20(12), 2412-2419 (1999-09-28)
The feasibility of polymeric phases based on a silicone polymer backbone as pseudostationary phases for electrokinetic chromatography has been investigated. Silicone phases were studied because of the range of chemistries that could be developed based on these backbones, and because
J Komatsu et al.
Journal of biomolecular structure & dynamics, 22(3), 331-337 (2004-10-12)
This report shows a new DNA stretching method using migration of an ice-water interface. DNA molecules were stretched accompanying the migration of the solid-liquid interface and immobilized in frozen area. This simple method needs no chemical modification to keep DNA
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)