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Merck
CN

333891

Silane

≥99.998%, electronic grade

Synonym(s):

Silicon tetrahydride

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About This Item

Linear Formula:
SiH4
CAS Number:
Molecular Weight:
32.12
UNSPSC Code:
12352300
PubChem Substance ID:
EC Number:
232-263-4
MDL number:
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grade

electronic grade

vapor density

1.1 (vs air)

assay

≥99.998%

form

gas

resistivity

>1000 Ω-cm

impurities

<1 ppm Carbon dioxide (CO2), <1 ppm Carbon monoxide (CO), <1 ppm Chlorosilanes, <1 ppm THC, <1 ppm Trisilane (Si3H8), <1 ppm Water (H2O), <100 ppm Hydrogen (H2), <2 ppm Nitrogen (N2), <2 ppm Siloxanes, <5 ppm Disilane (Si2H6)

bp

−112 °C (lit.)

mp

−185 °C (lit.)

transition temp

critical temperature −3.4 °C

density

1.114 g/mL at 25 °C (lit.)

SMILES string

[SiH4]

Application

Silane is used in the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics. Polycrystalline films can be deposited on silicon wafers and glass substrates via remote plasma chemical vapor deposition (RPCVD) using a SiH4-SiF2-H2 gas mixture. Silane is used widely as a dopant in the formation of III-IV semiconductor materials.

Other Notes

Stainless steel regulators Z527416 or Z527424 are recommended.

pictograms

FlameGas cylinder

signalword

Danger

hcodes

Hazard Classifications

Flam. Gas 1A - Press. Gas Compr. Gas

Storage Class

2A - Gases

wgk

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)

Regulatory Information

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Hu, C. C.
Thin Solid Films, 288, 147-147 (1996)
Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF4?SiH4?H2
Jin Jang
Thin Solid Films, 289, 227-227 (1996)
Quinn, L.J.
Thin Solid Films, 296, 7-7 (1997)

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