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About This Item
Linear Formula:
Ge(OC2H5)4
CAS Number:
Molecular Weight:
252.88
Beilstein:
3661173
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23
Assay
≥99.95% trace metals basis
form
liquid
reaction suitability
core: germanium
reagent type: catalyst
impurities
≤0.01% Si
refractive index
n20/D 1.407 (lit.)
density
1.14 g/mL at 25 °C (lit.)
SMILES string
CCO[Ge](OCC)(OCC)OCC
InChI
1S/C8H20GeO4/c1-5-10-9(11-6-2,12-7-3)13-8-4/h5-8H2,1-4H3
InChI key
GXMNGLIMQIPFEB-UHFFFAOYSA-N
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General description
Germanium(IV) ethoxide is a high-purity, colorless to pale yellow liquid organometallic compound with a trace metal purity of ≥99.95%. It is widely used as a catalyst and a precursor for solution-based and vapor-phase deposition processes, such as sol-gel synthesis, chemical vapor deposition (CVD), and atomic layer deposition (ALD). Its excellent volatility, reactivity, and metal-organic composition make it suitable for producing high-quality germanium-containing films, coatings, and nanostructures in electronics, optics, and semiconductor industries.
Application
Germanium(IV) ethoxide can be used as:
- A precursor in the synthesis of germanium oxide nanostructures via photonic curing.
- A key dopant precursor in the synthesis of Ge-doped hematite photoanodes for enhancing charge separation efficiency in photoelectrochemical water splitting.
- A germanium source to synthesize the bismuth germanate via the sol-gel process, to develop uniform thin films suitable for advanced applications.
Other Notes
Contains toluene
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
3 - Flammable liquids
WGK
WGK 3
Flash Point(F)
120.0 °F - closed cup
Flash Point(C)
48.9 °C - closed cup
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Regulatory Information
危险化学品
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Mat. Res. Soc. Symp. Proc., 73, 443-443 (1986)
Synthesis of Silicon and Germanium Oxide Nanostructures via Photonic Curing; a Facile Approach to Scale Up Fabrication
Khatoon, Najma and Subedi, et al.
ChemistryOpen, 13, e202300260-e202300260 (2014)
Ideal dopant to increase charge separation efficiency in hematite photoanodes: germanium
de Matos Rodrigues, et al.
Journal of Materials Chemistry, 10, 13456-13466 (2022)
Sol-gel processing of bismuth germanate thin-films
Secu, Mihail and Secu, et al.
Coatings, 10, 255-255 (2020)
Non-Cryst. Solids, 168, 195-195 (1994)
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