356980
Tantalum
rod, diam. 3.2 mm, ≥99.9% trace metals basis
Synonym(s):
Ta
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About This Item
Empirical Formula (Hill Notation):
Ta
CAS Number:
Molecular Weight:
180.95
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
vapor pressure
<0.01 mmHg ( 537.2 °C)
Assay
≥99.9% trace metals basis
form
rod
autoignition temp.
572 °F
resistivity
13.5 μΩ-cm, 20°C
diam.
3.2 mm
bp
5425 °C (lit.)
mp
2996 °C (lit.)
density
16.69 g/cm3 (lit.)
SMILES string
[Ta]
InChI
1S/Ta
InChI key
GUVRBAGPIYLISA-UHFFFAOYSA-N
Preparation Note
6.5 g = 5 cm; 32.5 g = 25 cm
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Regulatory Information
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Frédéric Clarençon et al.
Journal of neurosurgery. Spine, 18(6), 606-610 (2013-04-23)
Presurgical devascularization of hypervascular spinal metastases has been shown to be effective in preventing major blood loss during open surgery. Most often, embolization can be performed using polyvinyl alcohol (PVA) microparticles. However, in some cases, the close relationship between the
Sining Yun et al.
ChemSusChem, 6(3), 411-416 (2013-01-31)
Ta-based compounds show Pt-like behavior: Binary tantalum compounds as counter electrodes (CEs) in dye-sensitized solar cells (DSCs) demonstrate Pt-like electrocatalytic activity and competitive photovoltaic performance, matching the performance of DSCs with Pt CEs. The first-principle density functional theory (DFT) calculations
In response.
Mariano Fernandez Fairen et al.
Spine, 38(4), 370-371 (2012-12-04)
Gaurav Jindal et al.
Otolaryngologic clinics of North America, 45(6), 1423-1449 (2012-11-17)
A review of the current clinical applications of a variety of percutaneous and endovascular interventional procedures of the extracranial head and neck is presented. After a description of general principles and embolic agents for interventional procedures, management of specific disorders
Tohru Tsuruoka et al.
Nanotechnology, 23(43), 435705-435705 (2012-10-13)
Quantized conductance was observed in a cation-migration-based resistive switching memory cell with a simple metal-insulator-metal (MIM) structure using a thin Ta(2)O(5) layer. The observed conductance changes are attributed to the formation and dissolution of a metal filament with an atomic
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