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366870

Indium phosphide

Name: Indium phosphide
Brand: ALDRICH

pieces, 3-20 mesh, 99.998% trace metals basis

Synonym(s):

Indium monophosphide, Indium phosphide, Indium(III) phosphide

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About This Item

Linear Formula:

InP

CAS Number:

22398-80-7

Molecular Weight:

145.79

NACRES:

NA.23

PubChem Substance ID:

24862718

UNSPSC Code:

12352300

EC Number:

244-959-5

MDL number:

MFCD00016153

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Properties

Product Name

Indium(III) phosphide, pieces, 3-20 mesh, 99.998% trace metals basis

Quality Level

100

assay

99.998% trace metals basis

form

pieces

reaction suitability

reagent type: catalyst
core: indium

particle size

3-20 mesh

SMILES string

P#[In]

InChI

1S/In.P

InChI key

GPXJNWSHGFTCBW-UHFFFAOYSA-N

Description

pictograms

GHS08

signalword

Danger

hcodes

H350,H361,H372

pcodes

P201 - P308 + P313

Hazard Classifications

Carc. 1B - Repr. 2 - STOT RE 1

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

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Hexagonal geometric patterns formed by radial pore growth of InP based on Voronoi tessellation.

Hidetaka Asoh et al.

Nanotechnology, 23(21), 215304-215304 (2012-05-04)

To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the

III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar photoresponse.

Wenyong Liu et al.

Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27)

In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface

Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires.

Martin Hjort et al.

ACS nano, 6(11), 9679-9689 (2012-10-16)

Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. Characterization is done at all relevant length scales from micrometer to nanometer. We investigate

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Global Trade Item Number

SKU	GTIN
366870-1G	04061831826685