366870
Indium phosphide
pieces, 3-20 mesh, 99.998% trace metals basis
Synonym(s):
Indium monophosphide, Indium phosphide, Indium(III) phosphide
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About This Item
Linear Formula:
InP
CAS Number:
Molecular Weight:
145.79
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
244-959-5
MDL number:
Product Name
Indium(III) phosphide, pieces, 3-20 mesh, 99.998% trace metals basis
form
pieces
InChI key
GPXJNWSHGFTCBW-UHFFFAOYSA-N
InChI
1S/In.P
SMILES string
P#[In]
assay
99.998% trace metals basis
reaction suitability
reagent type: catalyst
core: indium
particle size
3-20 mesh
Quality Level
Related Categories
signalword
Danger
hcodes
pcodes
Hazard Classifications
Carc. 1B - Repr. 2 - STOT RE 1
Storage Class
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
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Wenyong Liu et al.
Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27)
In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface
Martin Hjort et al.
ACS nano, 6(11), 9679-9689 (2012-10-16)
Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. Characterization is done at all relevant length scales from micrometer to nanometer. We investigate
Lorenzo Romeo et al.
Nano letters, 12(9), 4490-4494 (2012-08-02)
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport
Hidetaka Asoh et al.
Nanotechnology, 23(21), 215304-215304 (2012-05-04)
To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the
Jens Hofrichter et al.
Optics express, 20(9), 9363-9370 (2012-04-27)
We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9)
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