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Merck
CN

367168

Sigma-Aldrich

Tin(II) sulfide

96%

Synonym(s):

Herzenbergite, Stannous sulfide, Tin monosulfide

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About This Item

Empirical Formula (Hill Notation):
SSn
CAS Number:
Molecular Weight:
150.78
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
Assay:
96%
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Assay

96%

density

5.22 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

S=[SnH2]

InChI

1S/S.Sn

InChI key

AFNRRBXCCXDRPS-UHFFFAOYSA-N

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Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Zhanjun Yang et al.
Biosensors & bioelectronics, 26(11), 4337-4341 (2011-05-20)
A novel biosensor is developed based on immobilization of proteins on nanoflake-like SnS₂ modified glass carbon electrode (GCE). With glucose oxidase (GOD) as a model, direct electrochemistry of the GOD/nanoflake-like SnS₂ is studied. The prepared SnS₂ has large surface area
Tetrahedral zinc blende tin sulfide nano- and microcrystals.
Eric C Greyson et al.
Small (Weinheim an der Bergstrasse, Germany), 2(3), 368-371 (2006-12-29)
Hyunju Chang et al.
The journal of physical chemistry. B, 109(1), 30-32 (2006-07-21)
First principles calculations are used to predict the stability and electronic structures of SnS(2) nanotubes. Optimization of several structures and their corresponding strain energies confirm the stability of SnS(2) nanotube structures. Band structure calculations show that SnS(2) nanotubes could have
Shannon C Riha et al.
ACS applied materials & interfaces, 3(1), 58-66 (2011-01-05)
Cu₂ZnSnS₄ (CZTS) nanocrystals, synthesized by a hot injection solution method, have been fabricated into thin films by dip-casting onto fluorine doped tin oxide (FTO) substrates. The photoresponse of the CZTS nanocrystal films was evaluated using absorbance measurements along with photoelectrochemical
Debtanu De et al.
Nanotechnology, 24(2), 025202-025202 (2012-12-15)
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a carrier mobility of ∼1 cm(2) V(-1) s(-1). The results demonstrate the great potential of SnS(2), a

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