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393541

Gallium(III) acetylacetonate

99.99% trace metals basis

Synonym(s):

Ga(acac)3, Gallium(III) 2,4-pentanedionate

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About This Item

Linear Formula:
[CH3COCH=C(O-)CH3]3Ga
CAS Number:
14405-43-7
Molecular Weight:
367.05
NACRES:
NA.23
PubChem Substance ID:
24864524
UNSPSC Code:
12352103
EC Number:
238-377-0
MDL number:
MFCD00013492
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Quality Segment

assay

99.99% trace metals basis

form

solid

reaction suitability

core: gallium, reagent type: catalyst

mp

196-198 °C (dec.) (lit.)

SMILES string

CC(=O)\C=C(\C)O[Ga](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O

InChI

1S/3C5H8O2.Ga/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-;

InChI key

ZVYYAYJIGYODSD-LNTINUHCSA-K

General description

Gallium(III) acetylacetonate is a white to off-white crystalline solid with purity (99.99% trace metals basis) widely used as a precursor for thin films and nanomaterials. It is soluble in organic solvents such as ethanol, acetone, and toluene, making it suitable for solution-based nanoparticle synthesis. Its thermal stability, with decomposition occurring above ~200 °C, allows for controlled gallium release, making it ideal for the synthesis of nanomaterials and oxide layers. It is commonly employed in metal-organic chemical vapor deposition (CVD) and atomic layer deposition (ALD) to produce gallium oxide (Ga₂O₃) and gallium nitride (GaN) thin films, which are essential for electronic and optoelectronic applications.

Application

Gallium(III) acetylacetonate can be used:
  • As a precursor to synthesize nanocrystalline gallium oxide spinels via solvothermal process for various applications like photocatalysis, battery cathode materials and electrocatalysis.
  • To fabricate LiGa alloy layer on Li metal anode from in-situ electroreduction. It suppresses the anode dendrite formation in lithium-sulfur batteries.
  • To prepare highly efficient gallium-platinum (GaPt3) nanoparticles hot-solvent synthesis which act as electrocatalysts for hydrogen evolution reaction.
  • To synthesize γ-Ga2O3 nanocrystals for fabricating electron-transporting layer for perovskite solar cells. It forms effective interfacial connections with the perovskite top layer, enhancing the efficiency of charge transport.

Features and Benefits

  • The high purity (99.99% trace metals basis) ensures that no impurities interfere with the synthesis process, leading to higher yields and better quality of the gallium compounds.
  • High purity enhances catalytic activity and selectivity, reducing the formation of by-products and improving overall reaction efficiency.
  • The absence of trace metal impurities ensures the integrity and performance of the thin films, resulting in improved device efficiency and longevity of optoelectronic devices.
  • The high purity of the precursor minimizes defects and impurities in the semiconductor materials, enhancing their electrical properties and performance.

Pictograms

Health hazardExclamation mark
GHS08,GHS07

Signal Word

Warning

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Carc. 2 - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class

11 - Combustible Solids

WGK

WGK 3

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

PPE (personal protective equipment)

dust mask type N95 (US), Eyeshields, Gloves

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