393541
Gallium(III) acetylacetonate
99.99% trace metals basis
Synonym(s):
Ga(acac)3, Gallium(III) 2,4-pentanedionate
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About This Item
Linear Formula:
[CH3COCH=C(O-)CH3]3Ga
CAS Number:
Molecular Weight:
367.05
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
238-377-0
MDL number:
Quality Segment
assay
99.99% trace metals basis
form
solid
reaction suitability
core: gallium, reagent type: catalyst
mp
196-198 °C (dec.) (lit.)
SMILES string
CC(=O)\C=C(\C)O[Ga](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O
InChI
1S/3C5H8O2.Ga/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-;
InChI key
ZVYYAYJIGYODSD-LNTINUHCSA-K
General description
Gallium(III) acetylacetonate is a white to off-white crystalline solid with purity (99.99% trace metals basis) widely used as a precursor for thin films and nanomaterials. It is soluble in organic solvents such as ethanol, acetone, and toluene, making it suitable for solution-based nanoparticle synthesis. Its thermal stability, with decomposition occurring above ~200 °C, allows for controlled gallium release, making it ideal for the synthesis of nanomaterials and oxide layers. It is commonly employed in metal-organic chemical vapor deposition (CVD) and atomic layer deposition (ALD) to produce gallium oxide (Ga₂O₃) and gallium nitride (GaN) thin films, which are essential for electronic and optoelectronic applications.
Application
Gallium(III) acetylacetonate can be used:
- As a precursor to synthesize nanocrystalline gallium oxide spinels via solvothermal process for various applications like photocatalysis, battery cathode materials and electrocatalysis.
- To fabricate LiGa alloy layer on Li metal anode from in-situ electroreduction. It suppresses the anode dendrite formation in lithium-sulfur batteries.
- To prepare highly efficient gallium-platinum (GaPt3) nanoparticles hot-solvent synthesis which act as electrocatalysts for hydrogen evolution reaction.
- To synthesize γ-Ga2O3 nanocrystals for fabricating electron-transporting layer for perovskite solar cells. It forms effective interfacial connections with the perovskite top layer, enhancing the efficiency of charge transport.
Features and Benefits
- The high purity (99.99% trace metals basis) ensures that no impurities interfere with the synthesis process, leading to higher yields and better quality of the gallium compounds.
- High purity enhances catalytic activity and selectivity, reducing the formation of by-products and improving overall reaction efficiency.
- The absence of trace metal impurities ensures the integrity and performance of the thin films, resulting in improved device efficiency and longevity of optoelectronic devices.
- The high purity of the precursor minimizes defects and impurities in the semiconductor materials, enhancing their electrical properties and performance.
signalword
Warning
Hazard Classifications
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Carc. 2 - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
target_organs
Respiratory system
Storage Class
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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