40253
Hydrochloric acid
fuming 37%, 37-38%
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About This Item
Empirical Formula (Hill Notation):
HCl
CAS Number:
Molecular Weight:
36.46
EC Number:
231-595-7
UNSPSC Code:
12352301
PubChem Substance ID:
Beilstein/REAXYS Number:
1098214
MDL number:
Assay:
37-38%
Concentration:
30-50%
vapor density
1.3 (vs air)
vapor pressure
3.23 psi ( 21.1 °C), 7.93 psi ( 37.7 °C)
assay
37-38%
CofA
specification on request
concentration
30-50%
color
light yellow
bp
>100 °C (lit.)
solubility
H2O: soluble
density
1.18 g/mL at 20 °C
SMILES string
Cl
InChI
1S/ClH/h1H
InChI key
VEXZGXHMUGYJMC-UHFFFAOYSA-N
General description
Semiconductor grade hydrochloric acid has been characterized by inductively couple plasma mass spectrometry (ICP-MS). The trace detection of V, Cr, As and Se in 20% HCl was determined in the study. It′s efficiency as a microabrasive was studied.
Application
Hydrochloric acid may be used in the formulation of “standard cleaning bath” to purify metallurgical grade silicon (MGS) and polysilicon. Varying concentrations of the acid aided formation of spherical and rod like cellulose nanocrystals. Aqueous mixture of hydrochloric acid and Α-hydroxy acids (lactic, citric, malic, and tartaric acids) may be used to etch a III-V semiconductor (InP).
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signalword
Danger
hcodes
Hazard Classifications
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B - STOT SE 3
target_organs
Respiratory system
Storage Class
8B - Non-combustible corrosive hazardous materials
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
Regulatory Information
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Electrochemical properties of metallurgical-grade silicon in hydrochloric acid.
Kareh KA
Electrochimica Acta, 54(26), 6548-6553 (2009)
Analysis of semiconductor-grade HCl with the ELAN DRC ICP-MS: elimination of chloride-based interferences.
Kishi Y and Kawabata K
Atomic Spectroscopy, 23(5), 165-169 (2002)
Semiconductor Surface-Molecule Interactions, Wet etching of InP by ?-hydroxy acids
Bandaru P and Yablonovitch E
Journal of the Electrochemical Society, 149, G599-G602 (2002)