447609
Hexamethyldigermanium(IV)
technical grade
Synonym(s):
1,1,1,2,2,2-Hexamethyldigermane, Hexamethyldigermane
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About This Item
Linear Formula:
(CH3)3GeGe(CH3)3
CAS Number:
Molecular Weight:
235.49
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23
grade
technical grade
Quality Level
form
liquid
reaction suitability
core: germanium
refractive index
n20/D 1.456 (lit.)
bp
137-138 °C (lit.)
mp
−40 °C (lit.)
density
1.175 g/mL at 25 °C (lit.)
SMILES string
C[Ge](C)(C)[Ge](C)(C)C
InChI
1S/C6H18Ge2/c1-7(2,3)8(4,5)6/h1-6H3
InChI key
HLEHOFVKHRHBQI-UHFFFAOYSA-N
Related Categories
General description
Hexamethyldigermanium (Ge₂(CH₃)₆) is a volatile, moisture-sensitive organogermanium compound characterized by its Ge–Ge bond and six methyl groups. This compound exhibits high thermal stability and volatility, making it a promising candidate as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of germanium-containing thin films. Its organometallic nature allows for controlled decomposition pathways, facilitating the deposition of high-purity germanium layers essential in semiconductor and optoelectronic applications.
Application
Hexamethyldigermanium can be used as:
- A precursor in CVD processes for depositing germanium thin films. Its volatility and thermal properties enable the formation of uniform Ge layers on various substrates, which are crucial for semiconductor devices.
- A precursor in the synthesis of germanium-based nanostructures, where its controlled decomposition can lead to the formation of nanowires or nanoparticles with applications in electronics and photonics.
- A precursor material in the preparation of germanium-containing polymers or materials, where its reactivity can be harnessed to introduce Ge units into polymer backbones or frameworks.
Features and Benefits
Hexamethyldigermanium can be used as:
- A precursor in CVD processes for depositing germanium thin films. Its volatility and thermal properties enable the formation of uniform Ge layers on various substrates, which are crucial for semiconductor devices.
- A precursor in the synthesis of germanium-based nanostructures, where its controlled decomposition can lead to the formation of nanowires or nanoparticles with applications in electronics and photonics.
- A precursor material in the preparation of germanium-containing polymers or materials, where its reactivity can be harnessed to introduce Ge units into polymer backbones or frameworks.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Flam. Liq. 2
Storage Class Code
3 - Flammable liquids
WGK
WGK 3
Flash Point(F)
57.2 °F - closed cup
Flash Point(C)
14 °C - closed cup
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Regulatory Information
危险化学品
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Formation of Cu 1-x Ge x Nanoplatelets Using LPCVD of Ge2Me6 or Ge2Me6/Et4 Pb Mixture
V. Drinek, et al.
NANO, 10, 1550061-1550061 (2015)
Pd-Catalyzed Hydroxyl-Directed Cascade Hydroarylation/C?H Germylation of Nonterminal Alkenes and Aryl Iodides
Chun-Yan Wu, et al.},
The Journal of Organic Chemistry, 87, 9184-9196 (2022)
Palladium-Catalyzed Disilylation and Digermanylation of Alkene Tethered Aryl Halides: Direct Access to Versatile Silylated and Germanylated Heterocycles
Marco Wollenburg, et al.
Organic Letters, 22, 3679-3683 (2020)
Journal of the Chemical Society. Chemical Communications, 1236-1236 (1990)
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