462993
Methylsilane
electronic grade, ≥99.9%
Synonym(s):
Monosilylmethane, Silaethane, Silylmethane
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About This Item
Linear Formula:
CH3SiH3
CAS Number:
Molecular Weight:
46.14
UNSPSC Code:
12352300
NACRES:
NA.23
PubChem Substance ID:
EC Number:
213-598-5
Beilstein/REAXYS Number:
1730728
MDL number:
grade
electronic grade
vapor density
0.628 (−58 °C, vs air)
assay
≥99.9%
form
liquid
impurities
<10 ppm Carbon dioxide (CO2), <10 ppm Nitrogen (N2), <100 ppm Dimethylsilane (CH3)2SiH2, <100 ppm Methylchlorosilane CH3SiH2Cl, <2 ppm Argon + Oxygen (Ar + O2), <50 ppm Methane (CH4), <50 ppm Silane (SiH4)
bp
−57 °C (lit.)
mp
−157 °C (lit.)
SMILES string
C[SiH3]
InChI
1S/CH6Si/c1-2/h1-2H3
InChI key
UIUXUFNYAYAMOE-UHFFFAOYSA-N
Features and Benefits
Methylsilane is used in the plasma-assisted CVD of silicon carbide (SiC) and as a precursor to the epitaxial growth of SiGeC alloy layers via rapid thermal CVD. Recent developments include the use of methylsilane as a precursor to silicon-carbon-hydrogen polymer used as photoresists.
Precursor to silicon carbide or alloy thin films by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).
Other Notes
Stainless steel regulators Z527416 or Z527424 are recommended.
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 4 Dermal - Flam. Gas 1 - Press. Gas Liquefied gas
supp_hazards
Storage Class
2A - Gases
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)
Regulatory Information
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Mi, J.
J. Vac. Sci. Technol. B, 14, 1660-1660 (1996)
Yifan Li et al.
Beilstein journal of nanotechnology, 8, 2504-2514 (2017-12-21)
Interface conditions are an important property that can affect the drag of fluid flow. For surfaces with different oleophobicity, the boundary slip at the solid-oil interface is mostly larger than that at the solid-water interface. Roughness is a key factor
C A Diaz-Botia et al.
Journal of neural engineering, 14(5), 056006-056006 (2017-06-03)
Current neural probes have a limited device lifetime of a few years. Their common failure mode is the degradation of insulating films and/or the delamination of the conductor-insulator interfaces. We sought to develop a technology that does not suffer from