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About This Item

Linear Formula:
GeH4
CAS Number:
Molecular Weight:
76.67
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
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grade

electronic grade

vapor density

1.53 (−142 °C, vs air)

Assay

≥99.997%

form

gas

impurities

<0.5 ppm Oxygen (O2)
<1 ppm Carbon monoxide + Trigermane (CO+Ge3H8)
<1 ppm THC
<1 ppm Water (H2O)
<2 ppm Carbon dioxide (CO2)
<2 ppm Nitrogen (N2)
<20 ppm Digermane (Ge2H6)
<5 ppm Chlorogermanes
<5 ppm Germoxanes
<50 ppm Hydrogen (H2)

bp

−88.4 °C (lit.)

mp

−165 °C (lit.)

transition temp

critical temperature 35 °C

SMILES string

[GeH4]

InChI

1S/GeH4/h1H4

InChI key

QUZPNFFHZPRKJD-UHFFFAOYSA-N

Features and Benefits

Germane gas is used in the deposition of epitaxial and amorphous SiGe alloy layers used in the production of high performance devices including photovoltaic cells and integrated circuits (IC). Precursor to germanium-containing thin films by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). A CVD precursor for germanium carbide semiconducting films.

Other Notes

Stainless steel regulators Z527416 or Z527424 are recommended.

Signal Word

Danger

Hazard Statements

Hazard Classifications

Acute Tox. 2 Inhalation - Acute Tox. 4 Oral - Flam. Gas 1A - Press. Gas Compr. Gas

Storage Class Code

2A - Gases

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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