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Merck
CN

553131

Sigma-Aldrich

Tetrakis(ethylmethylamido)zirconium(IV)

≥99.99% trace metals basis

Synonym(s):

TEMAZ, Tetrakis(ethylmethylamino)zirconium(IV)

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About This Item

Linear Formula:
Zr(NCH3C2H5)4
CAS Number:
175923-04-3
Molecular Weight:
323.63
MDL number:
MFCD03427131
UNSPSC Code:
12352103
PubChem Substance ID:
24879307
NACRES:
NA.23

Key Documents

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Assay

≥99.99% trace metals basis

form

liquid

reaction suitability

core: zirconium

bp

81 °C/0.1 mmHg (lit.)

density

1.049 g/mL at 25 °C (lit.)

SMILES string

CCN(C)[Zr](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Zr/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

InChI key

SRLSISLWUNZOOB-UHFFFAOYSA-N

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General description

Tetrakis(ethylmethylamino)zirconium (TEMAZ or TEMAZr) is a colorless, thermally stable organozirconium MOCVD compound. It is soluble in non-polar solvents such as petroleum ether and dichloromethane, but insoluble in water. TEMAZ is widely used as a zirconium precursor in semiconductor manufacturing. We provide it with ≥99.99% purity on a trace metals basis, ensuring ppb-level trace metal impurities, making it suitable for high-quality thin films.

Application

Tetrakis(ethylmethylamido)zirconium(IV) is used
  • As a Zirconium precursor in atomic layer deposition (ALD) to create ZrO₂ nanocoatings on cathode-active materials, enhancing interfacial stability and electrochemical performance in solid-state battery applications.
  • As an organometallic precursor in low-temperature solution processing to synthesize chalcogenide perovskite films, facilitating the formation of carbon-free, oxygen-free BaZrS₃ for optoelectronic applications.
  • As a precursor in plasma-enhanced atomic layer deposition to fabricate high-quality ZrO₂-containing HfₓZr₁₋ₓO₂ thin films, for advanced ferroelectric memory device applications.
We also provide the same materials in 10 g quantities, packaged in stainless steel cylinders(725528).

Features and Benefits

  • High-purity (≥99.99% trace metals basis) precursors to prevent impurities from affecting film properties.
  • Analyzing 32+ elements at ppb levels ensures suitability for forming uniform films in semiconductor applications.
  • Offers <10 ppm chloride by ion chromatography, crucial for high-quality films in semiconductor applications. Chloride can adversely affect film quality by altering composition, increasing surface roughness, introducing defects that degrade electrical performance, and impairing adhesion, leading to delamination or cracking.

Pictograms

FlameExclamation mark
GHS02,GHS07

Signal Word

Danger

Hazard Statements

H225,H261,H315,H319,H335

Hazard Classifications

Eye Irrit. 2 - Flam. Liq. 2 - Skin Irrit. 2 - STOT SE 3 - Water-react 2

Target Organs

Respiratory system

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

50.0 °F - closed cup

Flash Point(C)

10 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Information

危险化学品
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Certificates of Analysis (COA)

Lot/Batch Number
SHBN5343
SHBM5511
SHBL3495
SHBF6263V
SHBD9953V

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Atomic layer deposition of metal fluorides using HF-pyridine as the fluorine precursor
Younghee Lee, et al.
Chemistry of Materials, 28, 2022-2032 (2016)
ZrO2 monolayer as a removable etch stop layer for thermal Al2O3 atomic layer etching using hydrogen fluoride and trimethylaluminum
David R Zywotko, et al.
Chemistry of Materials, 32, 10055-10065 (2020)

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