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About This Item
Linear Formula:
Zr(NCH3C2H5)4
CAS Number:
Molecular Weight:
323.63
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
Quality Level
assay
≥99.99% trace metals basis
reaction suitability
core: zirconium
bp
81 °C/0.1 mmHg (lit.)
density
1.049 g/mL at 25 °C (lit.)
SMILES string
CCN(C)[Zr](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Zr/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
InChI key
SRLSISLWUNZOOB-UHFFFAOYSA-N
General description
Tetrakis(ethylmethylamino)zirconium (TEMAZ or TEMAZr) is a colorless, thermally stable organozirconium MOCVD compound. It is soluble in non-polar solvents such as petroleum ether and dichloromethane, but insoluble in water. TEMAZ is widely used as a zirconium precursor in semiconductor manufacturing. We provide it with ≥99.99% purity on a trace metals basis, ensuring ppb-level trace metal impurities, making it suitable for high-quality thin films.
Application
Tetrakis(ethylmethylamido)zirconium(IV) is used
- As a Zirconium precursor in atomic layer deposition (ALD) to create ZrO₂ nanocoatings on cathode-active materials, enhancing interfacial stability and electrochemical performance in solid-state battery applications.
- As an organometallic precursor in low-temperature solution processing to synthesize chalcogenide perovskite films, facilitating the formation of carbon-free, oxygen-free BaZrS₃ for optoelectronic applications.
- As a precursor in plasma-enhanced atomic layer deposition to fabricate high-quality ZrO₂-containing HfₓZr₁₋ₓO₂ thin films, for advanced ferroelectric memory device applications.
Features and Benefits
- High-purity (≥99.99% trace metals basis) precursors to prevent impurities from affecting film properties.
- Analyzing 32+ elements at ppb levels ensures suitability for forming uniform films in semiconductor applications.
- Offers <10 ppm chloride by ion chromatography, crucial for high-quality films in semiconductor applications. Chloride can adversely affect film quality by altering composition, increasing surface roughness, introducing defects that degrade electrical performance, and impairing adhesion, leading to delamination or cracking.
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signalword
Danger
target_organs
Respiratory system
Storage Class
4.3 - Hazardous materials which set free flammable gases upon contact with water
ppe
Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter
hcodes
Hazard Classifications
Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1A - STOT SE 3 - Water-react. 1
flash_point_f
58.1 °F - closed cup
flash_point_c
14.5 °C - closed cup
Regulatory Information
危险化学品
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ZrO2 monolayer as a removable etch stop layer for thermal Al2O3 atomic layer etching using hydrogen fluoride and trimethylaluminum
David R Zywotko, et al.
Chemistry of Materials, 32, 10055-10065 (2020)
Atomic layer deposition of metal fluorides using HF-pyridine as the fluorine precursor
Younghee Lee, et al.
Chemistry of Materials, 28, 2022-2032 (2016)
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 553131-5G | 04061838147707 |


