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Merck
CN

648663

Sigma-Aldrich

Bis(ethylcyclopentadienyl)ruthenium(II)

Synonym(s):

Diethylruthenocene

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About This Item

Linear Formula:
C7H9RuC7H9
CAS Number:
32992-96-4
Molecular Weight:
287.36
MDL number:
MFCD03427334
UNSPSC Code:
12352103
PubChem Substance ID:
24883596
NACRES:
NA.23

Key Documents

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form

liquid

Quality Level

100

composition

Ru, 33.9-36.4% gravimetric

reaction suitability

core: ruthenium
reagent type: catalyst

refractive index

n20/D 1.5870 (lit.)

bp

100 °C/0.01 mmHg (lit.)

mp

6 °C (lit.)

density

1.3412 g/mL at 25 °C (lit.)

storage temp.

−20°C

SMILES string

[Ru].CC[C]1[CH][CH][CH][CH]1.CC[C]2[CH][CH][CH][CH]2

InChI

1S/2C7H9.Ru/c2*1-2-7-5-3-4-6-7;/h2*3-6H,2H2,1H3;

InChI key

VLTZUJBHIUUHIK-UHFFFAOYSA-N

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General description

Bis(ethylcyclopentadienyl)ruthenium(II) is a organometallic compound widely used as a catalyst and as a precursor for thin-film deposition. It is valued for its high thermal stability, volatility, and efficiency in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes to create high-purity ruthenium and ruthenium oxide films. This compound plays a crucial role in microelectronics, catalysis, and energy materials.

Application

Bis(ethylcyclopentadienyl)ruthenium can be used:
  • A precursor to synthesize ruthenium films via the atomic layer deposition (ALD) method.
  • A precursor to synthesize ruthenium thin films on substrates such as SiO2 via plasma enhanced atomic layer deposition (PEALD) method.
  • A metal-organic precursor in the chemical vapor deposition (CVD) process to deposit ruthenium (Ru) thin films suitable for applications like capacitor electrodes in microelectronics.
  • A precursor to prepare ultrathin ruthenium (Ru) films via the atomic layer deposition (ALD) and selective etching techniques.

Features and Benefits

Bis(ethylcyclopentadienyl)ruthenium(II) exhibits:
  • High Volatility: Suitable for gas-phase delivery in Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD).
  • Thermal Stability: Stable under typical ALD/CVD processing temperatures

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H315,H319,H335

Hazard Classifications

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

10 - Combustible liquids

WGK

WGK 3

Flash Point(F)

>199.9 °F - closed cup

Flash Point(C)

> 93.3 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
MKCX8743
MKCX6243
MKCT4194
MKCS3924
MKCK2669

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Water-assisted process for purification of ruthenium nanomaterial fabricated by electron beam induced deposition
Rohdenburg, Markus and Winkler, et al.
ACS Applied Nano Materials, 3, 8352-8364 (2020)
Atomic layer deposition of Ruthenium on different interfaces for an advanced metallization system of ICs
Smirnova, EA and Miakonkikh, et al.
Journal of Physics. Conference Series, 1695, 012045-012045 (2020)
Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating.
Choi SH, et al.
Journal of the Electrochemical Society, 158(6), D351-D356 (2011)
Growth mechanism of Ru films prepared by chemical vapor deposition using bis (ethylcyclopentadienyl) ruthenium precursor
Matsui, Yuichi and Hiratani, et al.
Electrochemical and Solid-State Letters, 4, C9-C9 (2001)
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems.
Waechtler T, et al.
Microelectronic Engineering, 88(5), 684-689 (2011)
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