651494
磷化镓
(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm
别名:
Gallium monophosphide
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关于此项目
线性分子式:
GaP
化学文摘社编号:
分子量:
100.70
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
235-057-2
MDL number:
Quality Segment
form
(single crystal substrate)
resistivity
~0.3 Ω-cm
diam. × thickness
2 in. × 0.5 mm
mp
1480 °C
density
4.13 g/mL at 25 °C
semiconductor properties
<111>
SMILES string
[P]#[Ga]
InChI
1S/Ga.P
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
General description
未掺杂的（N 型半导体），载流子浓度 = 2-6×1016cm-3，蚀坑密度 <3×105cm-2，生长技术为液封直拉法
热膨胀：5.3×10-6/°C
Physical form
立方晶系 (a = 5.4505Å)
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signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
11 - Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves