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Sigma-Aldrich

Tetrakis(dimethylamido)hafnium(IV)

packaged for use in deposition systems

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Synonym(s):
TDMAH, Tetrakis(dimethylamino)hafnium(IV)
Linear Formula:
[(CH3)2N]4Hf
CAS Number:
Molecular Weight:
354.79
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

≥99.99% (trace metals analysis)

form

low-melting solid

reaction suitability

core: hafnium

mp

26-29 °C (lit.)

density

1.098 g/mL at 25 °C

SMILES string

CN(C)[Hf](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

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General description

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.

Application

Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.

Pictograms

FlameCorrosion

Signal Word

Danger

Hazard Statements

Hazard Classifications

Flam. Sol. 1 - Skin Corr. 1B - Water-react 2

Supplementary Hazards

Storage Class Code

4.3 - Hazardous materials, which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

109.4 °F - closed cup

Flash Point(C)

43 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Applied Physics Letters, 91, 193503-193503 (2007)
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Hausmann DM, Gordon RG
Journal of Crystal Growth, 249, 251-261 (2003)

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