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Merck
CN

667498

Tungsten etchant

Synonym(s):

Tungsten etch

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About This Item

UNSPSC Code:
12352300
NACRES:
NA.23
MDL number:
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General description

Tungsten etchant is a mixture of potassium hydroxide and potassium ferricyanide based solution that facilitates the removal of tungsten and other materials like aluminium by dipping the substrate into the etching solution.

Application

Selective etchants for tungsten thin-film metallizations used in semiconductor and microelectronics technology. Etchants are buffered, mildly alkaline ferricyanide-based formulations providing high resolution patterns with minimal undercutting and photoresist compatibility. Etchant is ready to use (no dilution required). Controlled, uniform etching is achieved by immersion or spray etch technique. Etch Capacity (rate declines at ∼70%) of 64 g/gallon. Recommended Operating Temperatures: 20-80 °C (30-40 °C most common).

Preparation Note

1. Select your etching method according to the table belowEtch Rate (Immersion) Etch Rate (Spray)
  • 20°C = 30 Å/second
  • 30°C = 140 Å/second 20°C = 80 Å/second
  • 60°C = 250 Å/second

2. Rinse with DI water

pictograms

Corrosion

signalword

Danger

Hazard Classifications

Aquatic Chronic 3 - Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1A

supp_hazards

Storage Class

8B - Non-combustible corrosive hazardous materials

wgk

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter


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  1. How do I increase the etch rate?

    1.The rate will approximately double with every 10°C increase in temperature. 2. Increase the rate of stirring or agitation.

  2. How do I reduce the etch rate?

    Adding 1-part deionized water to 2 parts etchant will reduce the etch rate approximately 50%.

  3. Do I need to dilute the etchant?

    No, it is ready to use.

  4. How do I reduce undercutting?

    Increase the rate of stirring or agitation.

Electrostatically actuated copper-blade microrelays.
Lee H, et al.
Sensors and actuators A, Physical, 100(1), 105-113 (2002)
Pattern processing results and characteristics for SCALPEL masks.
Novembre AE, et al.
Microelectronic Engineering, 46(1-4), 271-274 (1999)
Microstructure Evolution of W-Cu Alloy Wire.
Shao F, et al.
Materials Sciences and Applications, 3(03), 157-157 (2012)

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