vapor density
1.3 (vs air)
Quality Level
Application
CE-200 solution can be used to etch out the copper residue or foil from the chemical vapor deposited (CVD) graphene or carbonated films by immersing the substrate with the nanomaterial into the etchant solution for 30 min.
It is ideal for spray etching of copper. Ferric chloride based Cu etchant with etch rate of 0.5 mil/min @ 40 °C.
signalword
Danger
hcodes
Hazard Classifications
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1
Storage Class
8B - Non-combustible corrosive hazardous materials
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
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The effect of copper pre-cleaning on graphene synthesis
Kim SM, et al.
Nanotechnology, 24(36), 365602-365602 (2013)
Copper etching with cupric chloride and regeneration of waste etchant
Cakir O
Journal of Materials Processing Technology, 175(1-3), 63-68 (2006)
Microbial colonisation of transparent glass-like carbon films triggered by a reversible radiation-induced hydrophobic to hydrophilic transition
Jalvo B, et al.
Royal Society of Chemistry Advances, 6(55), 50278-50287 (2016)
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 667528-500ML | 04061832734637 |
