Skip to Content
Merck
CN

Key Documents

View All Documentation

725544

Tetrakis(ethylmethylamido)hafnium(IV)

packaged for use in deposition systems

Synonym(s):

TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)

Sign In to View Organizational & Contract Pricing.

Select a Size

Change View

About This Item

Linear Formula:
[(CH3)(C2H5)N]4Hf
CAS Number:
352535-01-4
Molecular Weight:
410.90
NACRES:
NA.23
PubChem Substance ID:
329764168
UNSPSC Code:
12352103
MDL number:
MFCD03427130
Technical Service
Need help? Our team of experienced scientists is here for you.
Let Us Assist

form

liquid

reaction suitability

core: hafnium, reagent type: catalyst

bp

78 °C/0.01 mmHg (lit.)

mp

<-50 °C

density

1.324 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

InChI key

NPEOKFBCHNGLJD-UHFFFAOYSA-N

General description

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.

Application

TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.

TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.
Precursors Packaged for Depositions Systems

Features and Benefits

This TEMAH is packaged in a SWAGELOK stainless-steeldeposition system convenient for connecting to ALD systems.

  • Steel cylinder connected to 316 stainless steelball-valve
  • 1/4 inch male SWAGELOK VCR connections

Still not finding the right product?

Explore all of our products under Tetrakis(ethylmethylamido)hafnium(IV)

signalword

Danger

target_organs

Respiratory system

supp_hazards

EUH014

Storage Class

4.3 - Hazardous materials which set free flammable gases upon contact with water

wgk

WGK 3

flash_point_f

51.8 °F - closed cup

flash_point_c

11 °C - closed cup

Hazard Classifications

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react. 1

Regulatory Information

新产品

This item has

Choose from one of the most recent versions:

Certificates of Analysis (COA)

Lot/Batch Number
SHBC4705V
SHBH4669V
SHBC3852V
20099EJV
16196JM

Don't see the Right Version?

If you require a particular version, you can look up a specific certificate by the Lot or Batch number.

Search for a COA

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Articles

High Purity Metalorganic Precursors for CPV Device Fabrication

High Purity Metalorganic Precursors for CPV Device Fabrication

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

Savannah ALD System for Atomic Layer Deposition

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

View All Articles
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 199-204 (2002)
Martin Rose et al.
ACS applied materials & interfaces, 2(2), 347-350 (2010-04-02)
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor.
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
View All Related Papers

Global Trade Item Number

SKUGTIN
725544-10G04061833607527