752703
Indium zinc oxide
sputtering target, diam. × thickness 3.00 in. × 0.125 in., 99.99% trace metals basis
Synonym(s):
IZO
InChI
1S/2In.4O.Zn
InChI key
YKMAIQQDQSGTBQ-UHFFFAOYSA-N
SMILES string
O=[Zn].O=[In]O[In]=O
assay
99.99% trace metals basis
form
solid
reaction suitability
core: indium
diam. × thickness
3.00 in. × 0.125 in.
mp
1900-1920 °C (lit.)
hcodes
pcodes
Hazard Classifications
Aquatic Chronic 2
Storage Class
13 - Non Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Regulatory Information
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Ito, N.; Sato, Y.; Song, P. K.; Kaijio, A.; Inoue, K.; Shigesato, Y.
Thin Solid Films, 496, 99-99 (2005)
Cui, J.; Wang, A.; Edleman, N. L.; Ni, J.; Lee, P.; Armstrong, N. R.; Marks, T. J.
Advanced Materials, 13, 1476-1476 (2001)
Sanghyun Ju et al.
Nature nanotechnology, 2(6), 378-384 (2008-07-26)
The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of
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