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Merck
CN

754021

PSiF-DBT

Synonym(s):

Poly[2,7-(9,9-dioctyl-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole], Poly[2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl(9,9-dioctyl-9H-9-silafluorene-2,7-diyl)-2,5-thiophenediyl]

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About This Item

Linear Formula:
(C42H46N2S3Si)n
CAS Number:
1004272-92-7
NACRES:
NA.23
UNSPSC Code:
12352103

Key Documents

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form

solid

mol wt

average Mn 10,000-80,000

loss

0.5 wt. %, 300 °C

mp

493-498 °C

orbital energy

HOMO 5.39 eV 

semiconductor properties

P-type (mobility=10−3 cm2/V·s)

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Application

PSiF-DBT can be used as a semiconducting polymer for the fabrication of polymeric solar cells (PSCs) and organic photovoltaic cells (OPVs).

General description

PSiF-DBT is a conductive polymer that can be used as an active layer with thermal stability and high degree of π-electron delocalization. It has a high mobility of charge carrier around 1×10-3cm2/(V s) which can be useful in organic electronics.

pictograms

Exclamation mark
GHS07

signalword

Warning

Hazard Classifications

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

Regulatory Information

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Certificates of Analysis (COA)

Lot/Batch Number
MKBP7208V
MKBL1378

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Electronic and structural properties in thermally annealed PSiF-DBT: PC71BM blends for organic photovoltaics
Borges BGAL, et al.
Thin Solid Films, 615(24), 165-170 (2016)
A direct route towards polymer/copper indium sulfide nanocomposite solar cells
Rath T, et al.
Advanced Energy Materials, 1(6), 1046-1050 (2011)
Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60
Marchiori CFN, et al.
Applied Physics Letters, 106(13) (2015)
Toward high performance inverted polymer solar cells
Gong X, et al.
Polymer, 53(24), 5437-5448 (2012)
High-performance polymer heterojunction solar cells of a polysilafluorene derivative
Wang, E.; Wang, L.; Lan, L.; et al.
Applied Physics Letters, 92, 033307-033307 (2008)

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