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Merck
CN

761443

Sigma-Aldrich

1,3,6,8(2H,7H)-Tetraone, 2,7-dicyclohexylbenzo[lmn][3,8]phenanthroline

98%

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About This Item

Empirical Formula (Hill Notation):
C26H26N2O4
CAS Number:
173409-43-3
Molecular Weight:
430.50
MDL number:
MFCD00333604
UNSPSC Code:
12352103
PubChem Substance ID:
329766938
NACRES:
NA.23

Key Documents

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Assay

98%

form

solid

mp

360-365 °C

λmax

382, 362, 243 nm in chloroform

semiconductor properties

N-type (mobility=6 cm2/V·s)

SMILES string

O=C1N(C2CCCCC2)C(=O)c3ccc4C(=O)N(C5CCCCC5)C(=O)c6ccc1c3c46

InChI

1S/C26H26N2O4/c29-23-17-11-13-19-22-20(26(32)28(25(19)31)16-9-5-2-6-10-16)14-12-18(21(17)22)24(30)27(23)15-7-3-1-4-8-15/h11-16H,1-10H2

InChI key

XWDVNWORIROXKG-UHFFFAOYSA-N

General description

1,3,6,8(2H,7H)-Tetraone, 2,7-dicyclohexylbenzo[lmn][3,8]phenanthroline (NDI-cy6) is a naphthalene-diimide based polymeric semiconducting material. It forms an n-type conductive layer that facilitates the conjugating system with electron mobility of 12 cm2V-1s-1.

Application

NDI-cy6 can be used as an electron transporting layer for the development of organic electronic devices which include organic field effect transistors (OFETs) and thin film transistors (TFTs).

Features and Benefits

Good thermal stability and low electron injection barrier. They display a smectic phase with columnar arrangement of mesogens inside the layers when cooled from isotropic phase.

Pictograms

Environment
GHS09

Signal Word

Warning

Hazard Statements

H400

Precautionary Statements

P273 - P391 - P501

Hazard Classifications

Aquatic Acute 1

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Certificates of Analysis (COA)

Lot/Batch Number
MKBK8335V
MKBK8335

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Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors
Deepak Shukla, et al.
Chemistry of Materials, 20, 7486-7491 (2008)
Rapid Evaluation of Electron Mobilities at Semiconductor-Insulator Interfaces in an Ambient Atmosphere by a Contactless Microwave-Based Technique
Inoue J, et al.
ACS Omega, 2(1), 164-170 (2017)
Thin-film morphology control in naphthalene-diimide-based semiconductors: high mobility n-type semiconductor for organic thin-film transistors
Shukla D, et al.
Chemistry of Materials, 20(24), 7486-7491 (2008)
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method
Rolin C, et al.
Nature Communications, 8, 14975-14975 (2017)
Toward quantitative prediction of charge mobility in organic semiconductors: tunneling enabled hopping model
Geng H, et al.
Advanced Materials, 24(26), 3568-3572 (2012)
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