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Merck
CN

772631

Sigma-Aldrich

Gallium

pieces, 99.99999% trace metals basis

Synonym(s):

Gallium element

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About This Item

Linear Formula:
Ga
CAS Number:
7440-55-3
Molecular Weight:
69.72
EC Number:
231-163-8
MDL number:
MFCD00134045
UNSPSC Code:
12352300
PubChem Substance ID:
329767578
NACRES:
NA.23

Key Documents

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Assay

99.99999% trace metals basis

form

pieces
 (metallic liquid or solid (ambient temp dependent))

resistivity

25.795 μΩ-cm, 30°C

bp

2403 °C (lit.)

mp

29.8 °C (lit.)

density

5.904 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

[Ga]

InChI

1S/Ga

InChI key

GYHNNYVSQQEPJS-UHFFFAOYSA-N

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Application

Gallium metal is used in many high technology applications including the growth of gallium semiconductor nanoparticles by MBE and as a catalyst for the formation of nanoscale semiconductors such as PbSe .

Pictograms

CorrosionExclamation mark
GHS05,GHS07

Signal Word

Warning

Hazard Statements

H290,H302,H412

Hazard Classifications

Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1

Storage Class Code

8B - Non-combustible corrosive hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Regulatory Information

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Certificates of Analysis (COA)

Lot/Batch Number
MKCH6524
MKBX8621V
MKBV4130V
MKBN7644V

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Jia Zhu et al.
Nano letters, 7(4), 1095-1099 (2007-03-14)
Lead chalcogenide nanostructures are good potential candidates for applications in multiexciton solar cells, infrared photodetectors, and electroluminescence devices. Here we report the synthesis and electrical measurements of hyperbranched PbSe nanowire networks. Hyperbranched PbSe nanowire networks are synthesized via a vapor-liquid-solid
Josef A Czaban et al.
Nano letters, 9(1), 148-154 (2009-01-16)
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam
C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
Christopher R Chitambar
Future medicinal chemistry, 4(10), 1257-1272 (2012-07-18)
There is an ever pressing need to develop new drugs for the treatment of cancer. Gallium nitrate, a group IIIa metal salt, inhibits the proliferation of tumor cells in vitro and in vivo and has shown activity against non-Hodgkin's lymphoma
Yanpeng Liu et al.
Nature communications, 5, 5461-5461 (2014-11-21)
Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several
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