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About This Item
Linear Formula:
Ga
CAS Number:
Molecular Weight:
69.72
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
231-163-8
MDL number:
assay
99.99999% trace metals basis
form
pieces, (metallic liquid or solid (ambient temp dependent))
reaction suitability
core: gallium
resistivity
25.795 μΩ-cm, 30°C
bp
2403 °C (lit.)
mp
29.8 °C (lit.)
density
5.904 g/mL at 25 °C (lit.)
storage temp.
2-8°C
SMILES string
[Ga]
InChI
1S/Ga
InChI key
GYHNNYVSQQEPJS-UHFFFAOYSA-N
Application
Gallium metal is used in many high technology applications including the growth of gallium semiconductor nanoparticles by MBE and as a catalyst for the formation of nanoscale semiconductors such as PbSe .
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signalword
Warning
hcodes
Hazard Classifications
Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1
flash_point_f
Not applicable
flash_point_c
Not applicable
Storage Class
11 - Combustible Solids
Regulatory Information
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Jia Zhu et al.
Nano letters, 7(4), 1095-1099 (2007-03-14)
Lead chalcogenide nanostructures are good potential candidates for applications in multiexciton solar cells, infrared photodetectors, and electroluminescence devices. Here we report the synthesis and electrical measurements of hyperbranched PbSe nanowire networks. Hyperbranched PbSe nanowire networks are synthesized via a vapor-liquid-solid
Josef A Czaban et al.
Nano letters, 9(1), 148-154 (2009-01-16)
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam
C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 772631-5G | 04061835508730 |

