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About This Item
Assay
95%
form
powder
mp
380-385 °C
SMILES string
FC1=C(F)C(F)=C(F)C(F)=C1C2=C3C=CC=CC3=C4C=C5C(C6=C(F)C(F)=C(F)C(F)=C6F)=C7C=CC=CC7=C5C=C42
InChI
1S/C32H10F10/c33-23-21(24(34)28(38)31(41)27(23)37)19-13-7-3-1-5-11(13)15-9-18-16(10-17(15)19)12-6-2-4-8-14(12)20(18)22-25(35)29(39)32(42)30(40)26(22)36/h1-10H
InChI key
OXAQTDQMTJVZOI-UHFFFAOYSA-N
General description
Application
The field-effect hole and electron mobilities extracted from its single crystal ambipolar transistor are 7 × 10^-4 and 3 × 10^-3 cm^2 V^-1 s^-1 in the saturation regime.
HOMO: -6.17 eV
LUMO: -4.00 eV
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
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Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.
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