803995
Graphene field effect transistor chip
Synonym(s):
GFET Chip
description
Material Description: graphene monolayer (RAMAN), Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
Quality Level
General description
Graphene:
GFET device info:
- Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
- Graphene Growth substrate: Copper foil, 25 μ thick
- Transfer process: Wet electromechanical separation
- Graphene Thickness: Single Atomic Layer
- Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
- FET mobility on Al2O3: ∼3000 cm2/V sec
- FET mobility on Si/SiO2: ∼1500 cm2/V sec
- FET mobility using new experimental method with unwrinkled graphene on Si/SiO2: ∼7000 cm2/V sec
- Material uniformity: >95 % Single layer graphene
- Transparency: >97.4 %
GFET device info:
- GFET Device Dirac Voltage Range 0-60 V
- GFET Chip: 10 devices per chip
- Yield: 90 %
Application
- Chemical Sensors
- Biosensors
Storage Class
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Regulatory Information
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Aniket Kakatkar et al.
Nanotechnology, 26(12), 125502-125502 (2015-03-06)
A graphene channel field-effect biosensor is demonstrated for detecting the binding of double-stranded DNA and poly-l-lysine. Sensors consist of chemical vapor deposition graphene transferred using a clean, etchant-free transfer method. The presence of DNA and poly-l-lysine are detected by the
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