description
Material Description: graphene monolayer (RAMAN)
Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
Quality Level
General description
Graphene:
GFET device info:
- Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
- Graphene Growth substrate: Copper foil, 25 μ thick
- Transfer process: Wet electromechanical separation
- Graphene Thickness: Single Atomic Layer
- Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
- FET mobility on Al2O3: ∼3000 cm2/V sec
- FET mobility on Si/SiO2: ∼1500 cm2/V sec
- FET mobility using new experimental method with unwrinkled graphene on Si/SiO2: ∼7000 cm2/V sec
- Material uniformity: >95 % Single layer graphene
- Transparency: >97.4 %
GFET device info:
- GFET Device Dirac Voltage Range 0-60 V
- GFET Chip: 10 devices per chip
- Yield: 90 %
Application
- Chemical Sensors
- Biosensors
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Choose from one of the most recent versions:
Certificates of Analysis (COA)
Lot/Batch Number
Don't see the Right Version?
If you require a particular version, you can look up a specific certificate by the Lot or Batch number.
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service