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Merck
CN

GF55367185

Tantalum

foil, 0.2m coil, thickness 0.01mm, 99.9%

Synonym(s):

Tantalum, TA000290, Ta

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About This Item

Empirical Formula (Hill Notation):
Ta
CAS Number:
Molecular Weight:
180.95
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141741
MDL number:
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InChI

1S/Ta

SMILES string

[Ta]

InChI key

GUVRBAGPIYLISA-UHFFFAOYSA-N

vapor pressure

<0.01 mmHg ( 537.2 °C)

assay

99.9%

form

foil

autoignition temp.

572 °F

manufacturer/tradename

Goodfellow 553-671-85

resistivity

13.5 μΩ-cm, 20°C

L × thickness

0.2 m × 0.01 mm

bp

5425 °C (lit.)

mp

2996 °C (lit.)

density

16.69 g/cm3 (lit.)

General description

For updated SDS information please visit www.goodfellow.com.

Legal Information

Product of Goodfellow

Regulatory Information

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Xinjian Feng et al.
Nano letters, 10(3), 948-952 (2010-02-12)
Tantalum nitride (Ta3N5) has a band gap of approximately 2.07 eV, suitable for collecting more than 45% of the incident solar spectrum energy. We describe a simple method for scale fabrication of highly oriented Ta3N5 nanotube array films, by anodization
Yingxun Du et al.
Journal of hazardous materials, 225-226, 21-27 (2012-05-23)
In order to overcome the limitation of the application of nanoparticles, tantalum (oxy)nitrides nanotube arrays on a Ta foil were synthesized and introduced in vis (visible light)-Fenton-like system to enhance the degradation of atrazine. At first, the anodization of tantalum
Zhongli Cai et al.
Radiation research, 165(3), 365-371 (2006-02-24)
Both thick and thin films of pGEMR-3Zf- plasmid DNA deposited on a tantalum foil were exposed to soft X rays (effective energy of 14.8 keV) for various times in air under a relative humidity of 45% (Gamma approximately 6, where
J G Sen Gupta
Talanta, 32(1), 1-6 (1985-01-01)
An improved graphite furnace atomic-absorption method has been developed for the determination of Sc, Y and the rare-earth elements in silicate rocks and related materials. The method, which involves the separation of the lanthanides by ion-exchange followed by their determination
H H Pieper et al.
The Review of scientific instruments, 83(5), 055110-055110 (2012-06-07)
We present a versatile system for the preparation of oxide crystal surfaces in the ultra-high vacuum (UHV) at temperatures up to 1300 K. Thermal treatment is accomplished by direct current heating of a tantalum foil in contact with the oxide

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