98% (elemental analysis)
solid
415-420 °C
N-type (mobility=1.4 cm2/V·s)
O=C1N(CCc2ccccc2)C(=O)c3ccc4c5ccc6C(=O)N(CCc7ccccc7)C(=O)c8ccc(c9ccc1c3c49)c5c68
1S/C40H26N2O4/c43-37-29-15-11-25-27-13-17-31-36-32(40(46)42(39(31)45)22-20-24-9-5-2-6-10-24)18-14-28(34(27)36)26-12-16-30(35(29)33(25)26)38(44)41(37)21-19-23-7-3-1-4-8-23/h1-18H,19-22H2
IIKSFQIOFHBWSO-UHFFFAOYSA-N
13 - Non Combustible Solids
WGK 3
Not applicable
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Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.
Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.
Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.
There is widespread demand for thin, lightweight, and flexible electronic devices such as displays, sensors, actuators, and radio-frequency identification tags (RFIDs). Flexibility is necessary for scalability, portability, and mechanical robustness.
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