648663
双(乙基环戊二烯)钌(II)
别名:
二乙基二茂钌
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关于此项目
线性分子式:
C7H9RuC7H9
CAS Number:
分子量:
287.36
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23
表单
liquid
质量水平
组成
Ru, 33.9-36.4% gravimetric
反应适用性
core: ruthenium
reagent type: catalyst
折射率
n20/D 1.5870 (lit.)
沸点
100 °C/0.01 mmHg (lit.)
mp
6 °C (lit.)
密度
1.3412 g/mL at 25 °C (lit.)
储存温度
−20°C
SMILES字符串
[Ru].CC[C]1[CH][CH][CH][CH]1.CC[C]2[CH][CH][CH][CH]2
InChI
1S/2C7H9.Ru/c2*1-2-7-5-3-4-6-7;/h2*3-6H,2H2,1H3;
InChI key
VLTZUJBHIUUHIK-UHFFFAOYSA-N
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一般描述
Bis(ethylcyclopentadienyl)ruthenium(II) is a organometallic compound widely used as a catalyst and as a precursor for thin-film deposition. It is valued for its high thermal stability, volatility, and efficiency in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes to create high-purity ruthenium and ruthenium oxide films. This compound plays a crucial role in microelectronics, catalysis, and energy materials.
应用
Bis(ethylcyclopentadienyl)ruthenium can be used:
- A precursor to synthesize ruthenium films via the atomic layer deposition (ALD) method.
- A precursor to synthesize ruthenium thin films on substrates such as SiO2 via plasma enhanced atomic layer deposition (PEALD) method.
- A metal-organic precursor in the chemical vapor deposition (CVD) process to deposit ruthenium (Ru) thin films suitable for applications like capacitor electrodes in microelectronics.
- A precursor to prepare ultrathin ruthenium (Ru) films via the atomic layer deposition (ALD) and selective etching techniques.
特点和优势
Bis(ethylcyclopentadienyl)ruthenium(II) exhibits:
- High Volatility: Suitable for gas-phase delivery in Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD).
- Thermal Stability: Stable under typical ALD/CVD processing temperatures
警示用语：
Warning
危险声明
危险分类
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
10 - Combustible liquids
WGK
WGK 3
闪点(°F)
>199.9 °F - closed cup
闪点(°C)
> 93.3 °C - closed cup
个人防护装备
Eyeshields, Gloves, type ABEK (EN14387) respirator filter
Water-assisted process for purification of ruthenium nanomaterial fabricated by electron beam induced deposition
Rohdenburg, Markus and Winkler, et al.
ACS Applied Nano Materials, 3, 8352-8364 (2020)
Atomic layer deposition of Ruthenium on different interfaces for an advanced metallization system of ICs
Smirnova, EA and Miakonkikh, et al.
Journal of Physics. Conference Series, 1695, 012045-012045 (2020)
Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating.
Choi SH, et al.
Journal of the Electrochemical Society, 158(6), D351-D356 (2011)
Growth mechanism of Ru films prepared by chemical vapor deposition using bis (ethylcyclopentadienyl) ruthenium precursor
Matsui, Yuichi and Hiratani, et al.
Electrochemical and Solid-State Letters, 4, C9-C9 (2001)
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems.
Waechtler T, et al.
Microelectronic Engineering, 88(5), 684-689 (2011)
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