Dattatray J Late et al.
ACS nano, 6(6), 5635-5641 (2012-05-15)
Field effect transistors using ultrathin molybdenum disulfide (MoS(2)) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS(2) devices measured under ambient environment.