357073
Indium
wire, diam. 1.0 mm, 99.995% trace metals basis
Synonym(s):
Indium element
Sign In to View Organizational & Contract Pricing.
Select a Size
Change View
About This Item
Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141719
EC Number:
231-180-0
MDL number:
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.995% trace metals basis
form
wire
reaction suitability
core: indium
resistivity
8.37 μΩ-cm
diam.
1.0 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
Preparation Note
5.6 g = 1 m; 28 g = 5 m
Still not finding the right product?
Explore all of our products under Indium
signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
Storage Class
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
R C Longo et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01)
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 357073-28G | 04061838053817 |
| 357073-5.6G | 04061838145871 |