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407380

Tetrakis(dimethylamido)titanium(IV)

Name: Tetrakis(dimethylamido)titanium(IV)
Brand: ALDRICH

technical grade, ≥80%

Synonym(s):

TDMAT, Tetrakis(dimethylamino)titanium(IV)

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About This Item

Linear Formula:

[(CH₃)₂N]₄Ti

CAS Number:

3275-24-9

Molecular Weight:

224.17

UNSPSC Code:

12352103

PubChem Substance ID:

329756016

EC Number:

221-904-3

MDL number:

MFCD00014861

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Properties

grade

technical grade

assay

≥80%

form

liquid

bp

50 °C/0.5 mmHg (lit.)

density

0.947 g/mL at 25 °C (lit.)

SMILES string

CN(C)[Ti](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Ti/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

MNWRORMXBIWXCI-UHFFFAOYSA-N

Description

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pictograms

GHS02,GHS05

signalword

Danger

Storage Class

4.3 - Hazardous materials which set free flammable gases upon contact with water

wgk

WGK 3

flash_point_f

-22.0 °F - closed cup

flash_point_c

-30 °C - closed cup

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

Hazard Classifications

Flam. Liq. 2 - Skin Corr. 1B - Water-react. 1

Regulatory Information

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Certificates of Analysis (COA)

Lot/Batch Number

16926DN

04605JQ

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The influence of structure and processing on the behavior of TiO2 protective layers for stabilization of n-Si/TiO2/Ni photoanodes for water oxidation.

Matthew T McDowell et al.

ACS applied materials & interfaces, 7(28), 15189-15199 (2015-06-18)

Light absorbers with moderate band gaps (1-2 eV) are required for high-efficiency solar fuels devices, but most semiconducting photoanodes undergo photocorrosion or passivation in aqueous solution. Amorphous TiO2 deposited by atomic-layer deposition (ALD) onto various n-type semiconductors (Si, GaAs, GaP