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Merck
CN

Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2).

Advanced materials (Deerfield Beach, Fla.) (2015-07-04)
Kunttal Keyshar, Yongji Gong, Gonglan Ye, Gustavo Brunetto, Wu Zhou, Daniel P Cole, Ken Hackenberg, Yongmin He, Leonardo Machado, Mohamad Kabbani, Amelia H C Hart, Bo Li, Douglas S Galvao, Antony George, Robert Vajtai, Chandra Sekhar Tiwary, Pulickel M Ajayan
ABSTRACT

The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
sulfur powder, 99.998% trace metals basis
Sigma-Aldrich
Ammonium perrhenate, ≥99%
Sigma-Aldrich
Ammonium perrhenate, 99.999% trace metals basis
Sigma-Aldrich
Sulfur, flakes, ≥99.99% trace metals basis
Sigma-Aldrich
Sulfur, powder, 99.98% trace metals basis