Merck
CN

On the origin of contact resistances of organic thin film transistors.

Advanced materials (Deerfield Beach, Fla.) (2012-06-26)
Marko Marinkovic, Dagmawi Belaineh, Veit Wagner, Dietmar Knipp
ABSTRACT

A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Tris[N,N-bis(trimethylsilyl)amide]yttrium
Sigma-Aldrich
Lithium bis(trimethylsilyl)amide, 97%
Sigma-Aldrich
Sodium bis(trimethylsilyl)amide solution, 1.0 M in THF
Sigma-Aldrich
Hexamethyldisilazane, produced by Wacker Chemie AG, Burghausen, Germany, ≥97.0% (GC)
Sigma-Aldrich
Sodium bis(trimethylsilyl)amide solution, 40% in THF
Sigma-Aldrich
Sodium bis(trimethylsilyl)amide solution, 0.6 M in toluene
Sigma-Aldrich
Lithium bis(trimethylsilyl)amide solution, 1.0 M in THF
Sigma-Aldrich
Potassium bis(trimethylsilyl)amide solution, 0.5 M in toluene
Sigma-Aldrich
Lithium bis(trimethylsilyl)amide solution, 1.0 M in hexanes
Sigma-Aldrich
Hexamethyldisilazane, reagent grade, ≥99%
Sigma-Aldrich
Potassium bis(trimethylsilyl)amide, 95%
Sigma-Aldrich
Potassium bis(trimethylsilyl)amide solution, 1 M in THF
Sigma-Aldrich
Lithium bis(trimethylsilyl)amide solution, 1 M in tert-butyl methyl ether
Sigma-Aldrich
Sodium bis(trimethylsilyl)amide, 95%
Sigma-Aldrich
Lithium bis(trimethylsilyl)amide solution, 1 M in toluene
Sigma-Aldrich
Lithium bis(trimethylsilyl)amide solution, 1.5 M in THF
Sigma-Aldrich
Potassium bis(trimethylsilyl)amide solution, 1.0 M in 2-methyltetrahydrofuran
Supelco
Hexamethyldisilazane, for GC derivatization, LiChropur, ≥99.0% (GC)
Sigma-Aldrich
Hexamethyldisilazane, ReagentPlus®, 99.9%
Sigma-Aldrich
Lithium bis(trimethylsilyl)amide solution, 0.5 M in 2-methyltetrahydrofuran
Sigma-Aldrich
Potassium bis(trimethylsilyl)amide solution, 1.0 M in methyl tert-butyl ether