721093
氧化锌，分散体
nanoparticles, <110 nm particle size, 40 wt. % in butyl acetate
别名:
NanoSunguard™（分散于乙酸丁酯中），Buhler, Inc. 产品
表单
nanoparticles
浓度
40 wt. % in butyl acetate
粒径
<110 nm
SMILES字符串
[Zn]=O
InChI
1S/O.Zn
InChI key
XLOMVQKBTHCTTD-UHFFFAOYSA-N
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警示用语：
Warning
危险声明
危险分类
Aquatic Acute 1 - Aquatic Chronic 1 - Flam. Liq. 3 - STOT SE 3
靶器官
Central nervous system
补充剂危害
储存分类代码
3 - Flammable liquids
WGK
WGK 3
闪点(°F)
80.6 °F
闪点(°C)
27 °C
法规信息
危险化学品
Characterizing the Structure and Defect Concentration of ZnO Nanoparticles in a Colloidal Solution.
Rossi T, et al.
The Journal of Physical Chemistry C, 118(33), 19422-19430 (2014)
Chia-Chi Wang et al.
Journal of nanoscience and nanotechnology, 13(6), 3880-3888 (2013-07-19)
Zinc oxide nanoparticles (nano-ZnO) are one of the most commonly used nanomaterials in industrial products including paints, cosmetics, and medical materials. Since ZnO is a well-known photocatalyst, it is important to further study if nano-ZnO cause phototoxic effect on skin
Jeongmin Kang et al.
Journal of nanoscience and nanotechnology, 13(5), 3526-3528 (2013-07-19)
ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in
Long Giang Bach et al.
Journal of nanoscience and nanotechnology, 13(1), 694-697 (2013-05-08)
ZnO nanoparticles were covalently wrapped by polystyrene (PS) through surface thiol-lactam initiated radical polymerization using the grafting from approach. The surface of ZnO nanoparticles was initially modified by 3-mercapto propyltrimethoxysilane to afford thiol functionalized ZnO nanoparticles (ZnO-SH). The controlled radical
Hyeong Pil Kim et al.
Journal of nanoscience and nanotechnology, 13(7), 5142-5147 (2013-08-02)
Solution processed cathode organic photovoltaic cells (OPVs) utilizing thin layer of ZnO with 27% increase in power conversion efficiency (PCE) to control devices have been demonstrated. Devices without the presence of ZnO layer have much lower PCE than the ones
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