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Merck
CN

730866

单分散硅纳米线

undoped, diam. × L 150 nm ± 30 nm × 20 μm ± 2 μm, 1 x 106 wires/mL

别名:

NanoFET

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UNSPSC Code:
12352103
EC Number:
200-661-7
MDL number:
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form

dispersion

composition

, >99% (Silicon-basis)

diam. × L

150 nm ± 30 nm × 20 μm ± 2 μm

density

0.773 g/mL at 25 °C

SMILES string

[Si]

General description

This material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. They can be assembled onto different substrates, such as flexible or transparent ones amongst others.
Typically 1 μg/mL in Isopropyl alcohol

Legal Information

Product of Nanosys, Inc.


pictograms

FlameExclamation mark

signalword

Danger

Hazard Classifications

Eye Irrit. 2 - Flam. Liq. 2 - STOT SE 3

target_organs

Respiratory system

存储类别

3 - Flammable liquids

wgk

WGK 1

flash_point_f

53.6 °F

flash_point_c

12 °C

法规信息

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Lot/Batch Number

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Michael C McAlpine et al.
Nature materials, 6(5), 379-384 (2007-04-24)
The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could
Erik M Freer et al.
Nature nanotechnology, 5(7), 525-530 (2010-06-08)
Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of